Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. Y. Laval »
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J. Y. Labandibar < J. Y. Laval < J. Y. Lesiourd  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
001543 (1999-08-15) High resolution electron microscope analysis of lattice distortions and In segregation in highly strained In0.35Ga0.65As coherent islands grown on GaAs (001)
001706 (1999) Local stress in highly strained coherent InGaAs islands
001A33 (1998) Atomic-scale mapping of local lattice distortions in highly strained coherent islands of InxGa1-xAs/GaAs by high-resolution electron microscopy and image processing
001D19 (1997) 2D-3D transition in highly strained GaAs/Ga1-xInxAs heterostructures by transmission electron microscopy
001F59 (1996) Dislocation introduction in the initial stages of MBE growth of highly strained In0.30Ga0.70As/GaAs structures
002653 (1993) Improvement of the growth of InxGa1-xAs on GaAs (001) using Te as surfactant
002E64 (1987) Two-dimensional defects in InSe

List of associated KwdEn.i

Nombre de
documents
Descripteur
7Experimental study
5Gallium arsenides
4Indium arsenides
4Molecular beam epitaxy
4Semiconductor materials
4TEM
4Ternary compounds
3Heterojunctions
3Island structure
3Stresses
3Thin films
2Binary compounds
2Crystal growth
2Epitaxial layers
2Growth mechanism
2Inorganic compound
2Roughness
2Strained layer
2Stress relaxation
1Atomic layer method
1Characterization
1Charge carrier concentration
1Charge carrier mobility
1Chemical composition
1Coalescence
1Crystal growth from vapors
1Crystal nucleation
1Dislocations
1Electron microprobe
1Epitaxy
1Finite element method
1Fourier analysis
1Gallium Indium Arsenides Mixed
1Hall effect
1Heteroepitaxy
1High-resolution methods
1III-V semiconductors
1Image processing
1Impurity segregation
1Indium Selenides
1Indium compounds
1Lamellar compound
1Lattice distortion
1Lattice image
1Lattice relaxation
1Low temperature
1Molecular beam condensation
1Non stoichiometric composition
1Operating mode
1Planar defect
1Precipitation
1Quantum dots
1Semiconductor epitaxial layers
1Solid solutions
1Solid-solid interfaces
1Stacking fault
1Surface defect
1Surface segregation
1Surface structure
1Surfaces
1Surfactant
1Surfactants
1Tellurium
1Temperature
1Temperature effects
1Thickness
1Thin film
1Tin
1Transmission electron microscopy

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