Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. Portier »
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J. Podlecki < J. Portier < J. Potier  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
001730 (1999) Grafting mechanism of electrochromic PAA-WO3 composite film
001A41 (1998) A new and simple method for manufacturing electrochromic tungsten oxide films
001E42 (1996) Sur les semi-conducteurs dégénérés
002432 (1994) Correlations between the thermoelectric power and Hall effect of Sn or Ge doped In2O3 semiconductors
002534 (1993) The electronic effect of Ti4+, Zr4+ and Ge4+ dopings upon the physical properties of InO3 and Sn-doped In2O3 ceramics : application to new highly-transparent conductive electrodes
002794 (1992) Transport properties of copper-doped indium oxide and indium tin oxide ceramics
002864 (1992) Influence of thermal treatment under various oxygen pressures on the electronic properties of ceramics and single crystals of pure and tin-doped indium oxide
002921 (1992) Correlations between the electronic properties of doped indium oxide ceramics and the nature of the doping element
002985 (1991) Preparation and characterization of fluorinated indium tin oxide films prepared by R.F. sputtering
002996 (1991) On new indium tin oxihalides
002D00 (1988) Sur un critère de prévision de la stabilité des verres fluorés. II: Verres multicomposants
002F74 (1986) Etude de verres à base de InF3

List of associated KwdEn.i

Nombre de
documents
Descripteur
5Indium Oxides
4Experimental study
3Charge carrier concentration
3Charge carrier mobility
3Tin
2Acrylic acid polymer
2Binary compounds
2Doping
2Electronic properties
2Fluorides
2Glass
2Hall effect
2Indium oxides
2Inorganic compound
2Optical absorption
2Theoretical study
2Thin film
1Amorphous state structure
1Arsenic
1Arsenic additions
1Binary compound
1Carrier density
1Carrier mobility
1Ceramic materials
1Chemical composition
1Chemical reaction
1Copper
1Correlations
1Covalent bonds
1Cross sections
1Degenerate semiconductor materials
1Density
1Dip coating
1Display
1EPR spectrometry
1Electrical properties
1Electroceramics
1Electrochromic device
1Electrochromism
1Electrode production
1Electrodes
1Electronegativity
1Electronic structure
1Enthalpy
1Flat screen
1Free carrier
1Frontier orbital
1Germanium
1Germanium IV
1Germanium additions
1Halogen
1Heat treatment
1Impurity
1Impurity density
1Indium Fluorides
1Indium Oxygen Alloys
1Insertion
1Ion density
1Ion implantation
1Ionic bonds
1Lewis acid
1Magnetron
1Manufacturing process
1Measurement
1Modified material
1Nanocrystal
1Optical properties
1Optically transparent electrode
1Optoelectronic device
1Oxide ceramics
1Phase diagram
1Photoelectric effect
1Physical properties
1Polarizability
1Porous electrode
1Radiofrequency sputtering
1Raman spectrometry
1Reaction mechanism
1Semiconductor materials
1Silicon
1Stability
1Technical ceramics
1Temperature
1Thermal annealing
1Thermal properties
1Thermodynamic properties
1Tin Fluorine Tin Oxides Mixed
1Tin Indium Oxides Mixed
1Tin Oxides
1Tin oxides
1Titanium IV
1Transport process
1Tungsten Oxides
1Tungsten VI Oxides
1Valence
1Vitrification
1X ray diffraction
1Zirconium IV

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