Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. P. Praseuth »
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J. P. Pocholle < J. P. Praseuth < J. P. Redoules  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
001C90 (1997) Deep trap characterisation and conduction band offset determination of Al0.48In0.52As/(Ga0.7Al0.3)0.48In0.52As heterostructures
001D78 (1996-07-01) Low temperature electroluminescence spectroscopy of high electron mobility transistors on InP
001E44 (1996) Photodiode de type Métal-Semiconducteur-Métal (MSM) sur substrat d'InP
002147 (1995) Molecular beam epitaxy of AlGaInAs on patterned InP substrates for optoelectronic applications
002202 (1995) Continuous molecular beam epitaxy of arsenides and phosphides applied to device structures on InP substrates
002A00 (1991) Molecular beam epitaxy grown Al(GA)InAs : schottky contacts and deep levels
002A52 (1991) Double junction AllnAs/GaInAs multiquantum well avalanche photodiodes
002A80 (1990) Passivation de photodiodes pin en GaInAs par SiN x UVCVD
002D28 (1988) Two-dimensional electron gas at a Ga0.47In0.53As/(AlxGa1-x)0.48In0.52As interface
002D95 (1988) Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy
002D96 (1988) Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy
002E78 (1987) Study of silicon-doped AlxGayIn1-x-yAs quaternary layers by localized cathodoluminescence and electron acoustic microscopy
002F10 (1987) Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular-beam expitaxy
003032 (1986) Double-heterojunction GaAlInAs/GaInAs bipolar transistor grown by molecular beam epitaxy

List of associated KwdEn.i

Nombre de
documents
Descripteur
10Experimental study
6Molecular beam condensation
5Aluminium Gallium Indium Arsenides Mixed
5Inorganic compound
4Gallium Indium Arsenides Mixed
4Indium Phosphides
4Photodiode
4Thin film
3Epitaxy
3III-V compound
3Semiconductor materials
3Transmission electron microscopy
3X ray diffraction
2Aluminium Arsenides
2Aluminium Indium Arsenides Mixed
2Band structure
2Binary compound
2Chemical composition
2Crystal growth
2Electrical characteristic
2Electron mobility
2Gallium Arsenides
2Indium Arsenides
2Photoluminescence
2Silicon
2Solid solution
1Absorption
1Acceptor donor pair
1Acoustic microscopy
1Aluminium Gallium Indium Arsenides
1Aluminium arsenides
1Arsenides
1Avalanche
1Band offset
1Cathodoluminescence
1Characterization
1Charge carrier trapping
1Chemical vapor deposition
1Conduction bands
1Crystal defect level
1Crystalline structure
1Crystallinity
1DLTS
1Deep level
1Defect states
1Dislocation
1Doping
1Double heterojunction
1Electron gas
1Electron microscopy
1Energy diagram
1Energy gap
1Frequency response
1Gallium arsenides
1Graded junction
1Growth mechanism
1Hall effect
1Heteroepitaxy
1Heterojunction
1Heterostructures
1Impurity density
1Impurity level
1Indium arsenides
1Infrared spectrometry
1Leakage current
1MIS structure
1MSM structure
1Magnetooscillatory properties
1Microelectronic fabrication
1Microelectronic processing
1Mismatch lattice
1Monolithic integrated circuit
1Morphology
1Nitrogen Silicon
1Non stoichiometric composition
1Operation study
1Optical properties
1Optoelectronic device
1Passband
1Passivation
1Phosphides
1Photoconductivity
1Production process
1Pulse response
1Quantum Hall effect
1Quantum well
1Quaternary compound
1Quaternary compounds
1Schottky barrier diodes
1Semiconductor substrate
1Shubnikov de Haas effect
1Spectral line profile
1Spectral line shift
1Stacking fault
1Surface
1Ternary compound
1Ternary compounds
1Thickness
1Transistor
1Transport processes

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