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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. P. Hirtz »
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J. P. Hebert < J. P. Hirtz < J. P. Itie  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
002567 (1993) Room temperature 600mW CW output power per facet from single GaInAs/GaAs/GaInP large area laser diode grown by CBE
002642 (1993) Influence of rapid thermal annealing on the properties of strained GaInAs quantum well lasers
002659 (1993) High quality 0.98 μm GaInAs/GaAs/GaInP lasers growth by CBE using tertiarybutylarsine and tertiarybutylphosphine
002725 (1993) Chemical beam epitaxy of Ga0.5In0.5P using tertiarybutylphosphine
002911 (1992) Direct determination of the valence-band offsets at Ga0.47In0.53As/InP and InP/Ga0.47In0.53As heterostructures by ultraviolet photoemission spectroscopy
002973 (1991) Sulfur doping of GaAs and GaInP grown by metalorganic molecular beam epitaxy using a hydrogen sulfide gaseous source
002A04 (1991) Metal organic molecular beam epitaxy growth of Ga0.5In0.5P/GaAs quantum well structures
002A06 (1991) MOMBE growth of high quality GaAs/GaInP heterostructures
002A10 (1991) Kinetic study of metalorganic molecular beam epitaxy of GaP, InP, and GaxIn1-xP
002A65 (1991) Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures : growth kinetics, electrical and optical properties
002F99 (1986) Quantum Hall effect in In0.53Ga0.47As-InP heterojunctions with two populated electric subbands

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Epitaxy
7Gallium Indium Phosphides Mixed
6Experimental study
6Gallium Arsenides
6Semiconductor materials
5Gallium Indium Arsenides Mixed
5Inorganic compound
4Heterojunction
4Molecular beam condensation
3Chemical beam condensation
3Multiple quantum well
3Photoluminescence
3Semiconductor laser
2Crystal growth
2Electrical properties
2Indium Phosphides
2Organometallic compound
2Output power
2Temperature
2Thin film
1Activation energy
1Asymmetry
1Band offset
1Band structure
1CBE method
1Characterization
1Charge carrier trapping
1Concentration distribution
1Congress
1Continuous wave
1Current gain
1Electron mobility
1Energy gap
1Exciton
1Gallium compound
1Growth
1Growth from vapor
1Growth mechanism
1Heterojunction transistor
1Impurity density
1Impurity level
1Indium compound
1Injection laser
1Kinetics
1Low temperature
1Manufacturing process
1Mismatch lattice
1Multiple layer
1Optical properties
1Performance evaluation
1Photoelectron emission
1Quantum Hall effect
1Quantum well
1Rapid thermal annealing
1Reflection high energy electron diffraction
1Secondary ion mass spectrometry
1Shubnikov de Haas effect
1Strained quantum well
1Sulfur
1Ternary system
1Transistor
1Ultraviolet radiation
1Valence band
1Voltage current curve
1X ray diffraction

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