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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. P. Duchemin »
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J. P. Dubes < J. P. Duchemin < J. P. Dufour  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
002F50 (1987) CW phase-locked array Ga0.25In0.75As0.5P0.5-Inp high power semiconductor laser grown by low-pressure metalorganic chemical vapor deposition
003025 (1986) First observation of the quantum Hall effect in a Ga0.47In0.53As-InP heterostructure with three electric subbands
003056 (1985) Etude des matériaux spécifiques, l'épitaxie de semi-conducteurs composés et l'adaptation du masquage électronique à la WSI. Thème 2: épitaxie d'arséniure de gallium sur silicium
003064 (1985) Two-dimensional electron gases in quantum well and superlattices of Ga0.25In0.75As0.50P0.50/InP heterostructures grown by low pressure metalorganic chemical vapor deposition
003074 (1985) Growth of ultrapure and Si-doped InP by low pressure metalorganic chemical vapor deposition
003092 (1984) cw operation of 1.57-μm GaxIn1-xAsyP1-yInP distributed feedback lasers grown by low-pressure metalorganic chemical vapor deposition
003115 (1984) High-power high-efficiency LP-MOCVD InP Gunn diodes for 94 GHz
003122 (1984) CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVD

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Indium Phosphides
4Chemical vapor deposition
3CW laser
3Gallium Indium Arsenides phosphides Mixed
3Low pressure
3Organometallic compound
3Semiconductor laser
2Crystal growth
2Semiconductor materials
2Silicon
2Superlattice
1Advanced technology
1Buffer layer
1Charge carrier concentration
1Charge carrier mobility
1Deposition
1Diode
1Distributed feedback laser
1Distribution
1Electron gas
1Epitaxy
1Experimental study
1Gallium Arsenides
1Gallium Arsenides phosphides
1Gallium Indium Arsenides Mixed
1Gallium Indium Arsenides phosphides
1Gallium Indium Phosphides Mixed
1Gallium Phosphides
1Gases
1Gunn diode
1Hall effect
1Heterojunction
1Impurity
1Impurity density
1Inorganic compound
1Instrumentation
1Integrated circuit
1Laminated structure
1Low temperature
1Manufacturing
1Microelectronic fabrication
1Microwave
1Millimetric wave
1Monolithic integrated circuit
1Network
1Operating conditions
1Output power
1Phase locking
1Photoluminescence
1Preparation
1Pump
1Quantum Hall effect
1Quantum well
1Reactor
1Ridge waveguide
1Shubnikov de Haas effect
1Solid solution
1Thin film
1Transition layer
1Two dimensional system
1X ray diffraction
1Yield

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "J. P. Duchemin" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "J. P. Duchemin" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    J. P. Duchemin
}}
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