Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. P. Andre »
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J. P. Albert < J. P. Andre < J. P. André  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
001C47 (1997) Investigations of giant 'forbidden' optical anisotropy in GaInAs-InP quantum well structures
001E62 (1996) Time-resolved luminescence in InP/AlInAs type II quantum-well structures
001E98 (1996) Observation of giant birefringence and dichroism in InP-AlInAs type II superlattices
002413 (1994) Evidence of non-communitativity of band discontinuities in InP-Al(IN)As-Ga(In)As heterostructures
002678 (1993) Evidences of non-commutativity and non-transivity of band discontinuities in InP-Al(In)As-Ga(In)As heterostructures
002832 (1992) Observation of laser emission in an InP-AlInAs type II superlattice
002856 (1992) Investigations of MOCVD-grown AllnAs-InP type II heterostructures
002961 (1991) Uniformity-optical properties of GaInP-GaAlInP layers grown by MOVPE
002A24 (1991) High optical and electrical quality GaInAs/InP, GaAs/InP double heterostructures for optoelectronic integration
002B25 (1990) Optical properties of As-etched and regrown InP/InGaAs quantum wires and dots
002B66 (1990) Enhancement of intrinsic photoluminescence due to lateral confinement in InP/InGaAs quantum wires and dots
002C31 (1989) Substrate-driven ordering microstructure in GaxIn1-xP alloys
002C32 (1989) Study of hopping in two dimensional electron gas in InGaAs/InP heterostructures with two subbands
002C68 (1989) III-V alloys and their potential for visible emitter applications
002D62 (1988) Optical studies of misfit strain effects in GaxIn1-x P epitaxial layers on (001) GaAs substrates
002E21 (1988) Chemical ordering in GaxIn1-xP semiconductor alloy grown by metalorganic vapor phase epitaxy
002E99 (1987) Photoluminescence investigation of InGaAS-InP quantum wells
002F89 (1986) Spectroscopic ellipsometry study of InP, GaInAs, and GaInAs/InP heterostructures
003023 (1986) Ga1-xInxAs-InP abrupt heterostructures grown by MOVPE AT ATMOSPHERIC PRESSURE

List of associated KwdEn.i

Nombre de
documents
Descripteur
14Experimental study
11Indium Phosphides
11Inorganic compound
10Photoluminescence
10Semiconductor materials
6Heterojunction
6Organometallic compound
5Gallium Indium Arsenides Mixed
5Gallium Indium Phosphides Mixed
4Aluminium Indium Arsenides Mixed
4Crystal growth
4Growth from vapor
4Thin film
4Very low temperature
3Chemical composition
3Epitaxy
2Band offset
2Binary compounds
2Chemical vapor deposition
2Excitation spectrum
2Exciton
2Indium arsenides
2Indium phosphides
2Magnetoconductivity
2Optical properties
2Quantum dot
2Quantum well
2Quantum wells
2Quantum wire
2Radiative recombination
2Solid solution
2Superlattice
2Temperature
2Ternary compounds
2Thickness
2Transmission electron microscopy
2X ray diffraction
1Abrupt junction
1Aluminium Gallium Arsenides Mixed
1Aluminium Gallium Indium Phosphides Mixed
1Aluminium Gallium Indium Phosphorus Mixed
1Aluminium arsenides
1Aluminum indium arsenide
1Antiphase domain
1Asymmetric external potential
1Bandwidth
1Birefringence
1Bound exciton
1Built in asymmetry
1Capacitance
1Characterization
1Charge carrier mobility
1Charge carrier trapping
1Chemical bonds
1Composition effects
1Conduction band
1Confinement
1Convergent beam method
1Crystal chemistry
1Density of states
1Dichroism
1Dielectric function
1Doping profile
1Double heterojunction
1Electrical conductivity
1Electroluminescence
1Electron beam lithography
1Electron diffraction
1Ellipsometry
1Energy gap
1Epitaxial film
1Excitation intensity
1Experiments
1Field effect transistor
1Gallium Arsenides
1Gallium Indium Phosphorus Mixed
1Gallium arsenides
1Growth mechanism
1Hall mobility
1Heteroepitaxy
1Heterojunctions
1High resolution
1Hopping conductivity
1Infrared absorption
1Infrared radiation
1Instrumentation
1Integrated circuit
1Interband transition
1Interface electron state
1Interfaces (materials)
1Ion beam
1Lamellar structure
1Localized state
1Low temperature
1Luminescence
1Magnetooptical properties
1Measurement
1Mismatch lattice
1Modulated structure
1Multiple quantum well

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