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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. Nagle »
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J. N. Talbot < J. Nagle < J. Neugebauer  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
001717 (1999) Indium surface segregation in strained GaInAs quantum wells grown on (1 1 1) GaAs substrates by MBE
001737 (1999) Epitaxially stacked GaAs/GaAlAs lasers using a low-resistance tunnel junction
001878 (1998-03-16) Local channel temperature measurements on pseudomorphic high electron mobility transistors by photoluminescence spectroscopy
001964 (1998) Optical and electrical characterization of low temperature grown GaInAs
001A45 (1997-12-29) Epitaxially stacked lasers with Esaki junctions: A bipolar cascade laser
001E85 (1996) Reconstruction and chemical ordering at the surface of strained (In, Ga)As epilayers
001F20 (1996) Inter-landau level tunneling in an InGaAs/AlAs/GaAs structure under tilted magnetic field
001F97 (1995-11-06) Commensurate and incommensurate phases at reconstructed (In,Ga)As(001) surfaces: x-ray diffraction evidence for a composition lock-in
002135 (1995) Piezoelectric field measurements by photoreflectance in strained InGaAs/GaAs structures grown on polar substrates
002292 (1994-05-01) Resonant tunneling structures with local potential perturbations
002320 (1994-01-24) Strained InGaAs/AlGaAs quantum well infrared detectors at 4.5 μm
002642 (1993) Influence of rapid thermal annealing on the properties of strained GaInAs quantum well lasers
002645 (1993) Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE
002652 (1993) In situ core-level photoelectron spectroscopy study of indium segregation at GaInAs/GaAs heterojunctions grown by molecular-beam epitaxy
002877 (1992) In0.1Ga0.9As/GaAs/AlAs pseudomorphic resonant tunneling diodes integrated with airbridge
002B26 (1990) Optical investigations of the band offsets in an InGaAs-InGaAsP-InP double-step heterostructure
002B27 (1990) Optical investigation of the band offsets in an InGaAs-InGaAsP-InP double-step quantum well
002F05 (1987) Monolayer epitaxy of III-V compounds by low-pressure metalorganic chemical vapor deposition
002F95 (1986) Room-temperature excitons in Ga0.47In0.53As-InP superlattices grown by low-pressure metalorganic chemical vapor deposition

List of associated KwdEn.i

Nombre de
documents		Descripteur
13Experimental study
11Gallium arsenides
9Indium arsenides
8Photoluminescence
7Gallium Indium Arsenides Mixed
7Semiconductor materials
7Ternary compounds
4Indium Phosphides
4Quantum well
3Aluminium arsenides
3Band structure
3Epitaxy
3Gallium Arsenides
3Inorganic compound
3Strained quantum well
3Tunnel effect
2Aluminium compounds
2Binary compounds
2Chemical composition
2Chemical vapor deposition
2Design
2Gallium Indium Arsenides phosphides Mixed
2Heterojunction
2III-V compound
2III-V semiconductors
2IV characteristic
2Indium compounds
2Infrared absorption
2Molecular beam condensation
2Photoelectron spectroscopy
2Quantum wells
2Resonance
2Segregation
2Semiconductor lasers
2Surface reconstruction
2Surface structure
2Ultraviolet radiation
1Absorptance
1Aluminium Arsenides
1Annealing
1Band offset
1Binary compound
1Binary system
1Capacitance
1Carbon additions
1Carrier mobility
1Chemical beam epitaxy
1Commensurate-incommensurate transformations
1Concentration distribution
1Congress
1Crystal growth
1Crystal growth from vapors
1Current density
1Defect states
1Diode
1Doped materials
1Electric conductivity
1Electronic structure
1Epitaxial layers
1Excitation spectrum
1Exciton
1Excitonic process
1Fabrication
1Growth from vapor
1Growth mechanism
1Hall effect
1Heterojunctions
1Heterostructures
1High electron mobility transistors
1In situ
1Incommensurate phases
1Indium Arsenides
1Infrared radiation
1Infrared spectra
1Inorganic compounds
1Instrumentation
1Internal strains
1Landau levels
1Laser diodes
1Low pressure
1Low temperature
1Magnetic field effects
1Measurement
1Measurement method
1Microstructure
1Molecular beam epitaxy
1Optical transition
1Performance
1Photodetectors
1Photoelectron spectrometry
1Piezoelectric constant
1Polar semiconductor
1Potentials
1Pressure effects
1Process control
1Quantum well lasers
1RESONANT TUNNELING
1Rapid thermal annealing
1Recombination
1Reflection high energy electron diffraction

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