J. Masses < J. Massies < J. Mateos

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 78.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000495 (2008)		Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures
000521 (2008)		Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots
000730 (2007)		AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
000767 (2006)		Structural characterisation of Sb-based heterostructures by X-ray scattering methods
000945 (2005)		Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes
000D49 (2003)		Indium surface segregation in AlSb and GaSb
000D55 (2003)		In surface segregation in InGaN/GaN quantum wells
000E27 (2002-10-28)		Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures
000E82 (2002-01-21)		Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes
000F53 (2002)		Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells
001000 (2002)		In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes
001078 (2001-09-15)		Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures
001108 (2001-04-01)		Investigation of the P-As substitution at GaAs/Ga0.51In0.49P interfaces by photoluminescence under pressure
001114 (2001-03-12)		Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
001115 (2001-02-26)		High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
001175 (2001)		Photoluminescence excitation spectroscopy of MBE grown InGaN quantum wells and quantum boxes
001178 (2001)		Photoconductance measurements and Stokes shift in InGaN alloys
001185 (2001)		Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE
001187 (2001)		Optical properties of self-assembled InGaN/GaN quantum dots
001201 (2001)		Modelling of absorption and emission spectra of InxGa1-xN layers grown by MBE
001230 (2001)		InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300 K in the whole visible spectrum

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List of associated KwdEn.i

Nombre de documents	Descripteur
66	Experimental study
44	Photoluminescence
40	Molecular beam epitaxy
36	Semiconductor materials
32	Ternary compounds
29	Gallium arsenides
28	III-V semiconductors
26	Indium arsenides
23	Quantum wells
22	Binary compounds
17	Gallium nitrides
17	Indium compounds
16	Indium nitrides
13	Gallium compounds
11	Crystal growth
11	Inorganic compound
11	Semiconductor quantum wells
11	Surface segregation
10	Growth mechanism
10	Quantum dots
9	Crystal growth from vapors
9	RHEED
8	Chemical composition
8	Epitaxy
8	Gallium Indium Arsenides Mixed
8	Thickness
8	Thin film
8	Thin films
7	Excitons
7	Molecular beam condensation
7	Reflection high energy electron diffraction
7	Semiconductor growth
7	Theoretical study
6	Heterojunctions
6	Line widths
6	Segregation
6	Solid solution
6	Stress relaxation
6	Wide band gap semiconductors
5	Aluminium Indium Arsenides Mixed
5	Island structure
5	Stokes shift
5	Strained layer
5	Temperature
4	Absorption spectra
4	Charge carriers
4	Chemical beam epitaxy
4	Excitation spectrum
4	Film growth
4	Heterostructures
4	III-V compound
4	Light emitting diodes
4	Semiconductor epitaxial layers
4	Semiconductor quantum dots
4	Temperature dependence
4	Time resolved spectra
3	Aluminium Gallium Arsenides Mixed
3	Energy gap
3	Energy-level transitions
3	Epitaxial layers
3	Gallium nitride
3	Heteroepitaxy
3	Indium Phosphides
3	Inorganic compounds
3	Interface states
3	MOVPE method
3	Mismatch lattice
3	Morphology
3	Solid-solid interfaces
3	Spectral shift
3	Stark effect
3	Strains
3	Stresses
3	Surfactant
2	Aluminium antimonides
2	Aluminium compounds
2	Arsenic compounds
2	Atomic layer method
2	Binding energy
2	Blue shift
2	Buffer layer
2	Chemical etching
2	Critical size
2	Diffusion length
2	Doping
2	Electric field effects
2	Electroluminescence
2	Electron localization
2	Electronic structure
2	Envelope function
2	Growth rate
2	High electron mobility transistor
2	In situ
2	Indium addition
2	Interface
2	Interface structure
2	Lattice parameters
2	Leakage current
2	MOCVD
2	Microstructure

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