Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. Marcon »
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J. Maquet < J. Marcon < J. Marcus  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000D83 (2003) Determination of beryllium and self-interstitial diffusion parameters in InGaAs
001045 (2002) Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects
001481 (2000) Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy
001642 (1999) The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE under nonequilibrium conditions
001665 (1999) Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE
001672 (1999) Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing
001768 (1999) Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaZs/InGaAsP, InGaAs/InP heterointerfaces
001778 (1999) A comprehensive study of beryllium diffusion in InGaAs using different forms of kick-out mechanism
001985 (1998) Investigation of Be diffusion in InGaAs using Kick-out mechanism
001A31 (1998) Be diffusion in InGaAs layers grown by gas source molecular beam epitaxy
001A32 (1998) Be diffusion in GaInAs homojunction structure grown by CBE
001A39 (1998) A study of Be diffusion in InGaAsP layers grown by gas-source molecular beam epitaxy
001B78 (1997) p-Type diffusion in InGaAs epitaxial layers using two models : A concentration dependent diffusivity and a point defect nonequilibrium
001D04 (1997) Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model
001D05 (1997) Beryllium diffusion in InGaAs compounds grown by chemical beam epitaxy
002011 (1995-10-09) Be diffusion mechanisms in InGaAs during post-growth annealing

List of associated KwdEn.i

Nombre de
documents
Descripteur
16Diffusion
15Beryllium additions
15Gallium arsenides
15Indium arsenides
14Experimental study
10Doped materials
9Epitaxial layers
8Depth profiles
8SIMS
8Semiconductor materials
8Ternary compounds
7Rapid thermal annealing
5Annealing
5Gallium phosphides
5III-V semiconductors
5Indium phosphides
5Quaternary compounds
5Thin films
4Doping
4GSMBE method
4Impurity diffusion
4Interstitials
4Temperature dependence
3Mechanism
3Simulation
3Theoretical study
2Crystal growth from vapors
2Diffusion coefficient
2Diffusion profile
2Digital simulation
2Doping profiles
2Heterostructures
2Interstitial impurities
2Modelling
2Non equilibrium conditions
2Point defects
1Arrhenius equation
1Arsenides phosphides
1Beryllium
1Binary compounds
1Buried layers
1Chemical beam epitaxy
1Computerized simulation
1Concentration distribution
1Crystal defect interaction
1Crystal defects
1Crystal doping
1Diffusivity
1Finite difference method
1Gallium Arsenides phosphides
1Heat treatments
1Homojunctions
1III-V compound
1Impurity distribution
1Impurity scattering
1Indium Arsenides phosphides
1Inorganic compounds
1Ion implantation
1Local equilibrium
1Modeling
1Phosphorus ions
1Substitutional impurities
1Thermal annealing
1p-type conductors

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