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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. M. Moison »
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J. M. Michalik < J. M. Moison < J. M. Nebus  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
001073 (2001-10-01) Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots
001323 (2000-08-28) Room temperature enhancement and inhibition of spontaneous emission in semiconductor microcavities
001C62 (1997) Improved reproducibility of AlGaInAs laser threshold by InP substrate deoxidation under phosphorous flux
001E79 (1996) Self-organized growth of InAs/GaAs quantum boxes
002142 (1995) Optical investigation of the self-organized grown of InAs/GaAs quantum boxes
002323 (1994-01-10) Self-organized growth of regular nanometer-scale InAs dots on GaAs
002861 (1992) Interaction of atomic hydrogen with native oxides of InP(100)
002912 (1992) Differences in the SiO2/InP interfaces obtained by thermal and UV-induced chemical vapour deposition
002A99 (1990) Thermal and photon-assisted interaction of ammonia, silane and oxygen with indium phosphide substrates
002D36 (1988) Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP-based metal-insulator-semiconductor devices
002E63 (1987) Two-photon photoemission study of the empty states of InP(100)
002E73 (1987) Surface recombination, surface states and Fermi level pinning
002F48 (1987) Commensurate and incommensurate phase transitions of the (001)InAs surface under changes of bulk lattice constant, as chemical potential, and temperature
003015 (1986) Influence of the near-band-edge surface states on the luminescence efficiency of InP
003026 (1986) Epitaxial regrowth of an InAs surface on InP: an example of artificial surfaces
003095 (1984) Surface defects induced by pulsed-laser processing of semiconductors and their low-temperature annealing

List of associated KwdEn.i

Nombre de
documents		Descripteur
11Experimental study
7Indium Phosphides
6Inorganic compound
5Gallium arsenides
5Photoluminescence
4Indium arsenides
3Auger electron spectrometry
3III-V semiconductors
3Molecular beam epitaxy
3Quantum dots
3Semiconductor materials
3Surface structure
2Binary compounds
2Charge carrier recombination
2Chemical composition
2Chemical vapor deposition
2Density of states
2Electronic structure
2Fermi level
2Gallium Arsenides
2Indium Arsenides
2Indium compounds
2Photoelectron spectrometry
2Reflection high energy electron diffraction
2Silicon
2Silicon Oxides
2Surface electron state
2X ray
1Aluminium arsenides
1Aluminium compounds
1Annealing
1Arrays
1Atomic force microscopy
1Chemical potential
1Commensurate incommensurate transformation
1Crystal face
1Crystal growth from vapors
1Deoxidation
1Desorption
1Electron energy loss spectrum
1Epitaxy
1Gas solid adsorption
1Growth mechanism
1Hydrogen Atoms
1Indium Phosphorus
1Infrared absorption
1Interface
1Internal strains
1Irradiation
1Island structure
1Kinetics
1LEED diffraction
1Laser beam
1Laser diodes
1Lattice parameters
1Line broadening
1Low temperature
1MIS structure
1MOCVD
1Mirrors
1Morphology
1Multilayers
1Nanostructures
1Non metal
1Optical resonators
1Oxide layer
1Patterning
1Phase transformation
1Photoelectron emission
1Photoelectron spectrum
1Pulsed beam
1Quantum electrodynamics
1Quaternary compounds
1RHEED
1Reproducibility
1Semiconductor growth
1Semiconductor lasers
1Semiconductor quantum dots
1Semiconductor quantum wells
1Spontaneous emission
1Strained layer
1Substrates
1Surface
1Surface defect
1Surface recombination
1Surface reconstruction
1Surface segregation
1Surface treatment
1TEM
1Temperature
1Theoretical study
1Thin film
1Thin films
1Threshold current
1Ultrahigh vacuum
1Ultraviolet radiation
1VPE
1Voltage capacity curve

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