List of bibliographic references
Number of relevant bibliographic references: 34.
[0-20] [
0 - 20][
0 - 34][
20-33][
20-40]
| Ident. | Authors (with country if any) | Title |
|---|
| 000758 (2006) |
| Surface-plasmon resonances in indium nitride with metal-enriched nano-particles |
| 000782 (2006) |
| Plasmonic effects in InN-based structures with nano-clusters of metallic indium |
| 000895 (2005) |
| Resonant Raman spectroscopy on InN |
| 000912 (2005) |
| Optical properties of InN with stoichoimetry violation and indium clustering |
| 000913 (2005) |
| Optical properties of InN related to surface plasmons |
| 000A41 (2004-03-19) |
| Mie Resonances, Infrared Emission, and the Band Gap of InN |
| 000B15 (2004) |
| Mie resonances, infrared emission, and the band gap of InN |
| 000B71 (2004) |
| Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply |
| 000F53 (2002) |
| Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells |
| 001108 (2001-04-01) |
| Investigation of the P-As substitution at GaAs/Ga0.51In0.49P interfaces by photoluminescence under pressure |
| 001138 (2001) |
| Thermally detected optical absorption, reflectance and photo-reflectance of In(As, P)/InP quantum wells grown by gas source molecular beam epitaxy |
| 001201 (2001) |
| Modelling of absorption and emission spectra of InxGa1-xN layers grown by MBE |
| 001283 (2001) |
| Absorption and emission of (In, Ga)N/GaN quantum wells grown by molecular beam epitaxy |
| 001310 (2000-10-15) |
| Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy |
| 001324 (2000-08-28) |
| InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K |
| 001516 (1999-11-15) |
| Optical spectroscopy study of the phase of the reflection coefficient of a single quantum well in the exciton resonance region |
| 001685 (1999) |
| Optical properties of (In, Ga)As/GaAs heterostructures grown on conventional (100) and (111)B GaAs substrates |
| 001718 (1999) |
| Indirect observation of single-exciton quantum beats in the time-resolved reflection of a single quantum well |
| 001738 (1999) |
| Epitaxial growth of InAsxP1-x/InP quantum wells by HVPE |
| 001919 (1998) |
| The determination of e14 in (111)B-grown (In, Ga)As/GaAs strained layers |
| 001920 (1998) |
| Temperature dependence of quantized states in (111)B-grown (In, Ga)As/GaAs multiple quantum well p-i-n diodes |
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