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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. Leotin »
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J. Lemut < J. Leotin < J. Lerme  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000445 (2009) High pressure and high magnetic field behaviour of free and donor-bound-exciton photoluminescence in InSe
000998 (2005) Density of states effective mass of n-type CuInSe2 from the temperature dependence of Hall coefficient in the activation regime
000B16 (2004) Microminiature Hall probes based on n-InSB(Sn)/i-GaAs heterostructure for pulsed magnetic field applications up to 52 T
000B55 (2004) Electronic structure of InAs/GaAs self-assembled quantum dots studied by high-excitation luminescence in magnetic fields up to 73 T
001364 (2000) Caractérisation électrique et optique du diseleniure de cuivre et d'indium
001368 (2000) Variable range hopping conduction in p-type CuInTe2
002020 (1995-09-15) Positive magnetoresistance in the variable-range-hopping regime in copper indium diselenide on either side of the critical field Bc
002164 (1995) Infrared reflectivity and electrical parameters of Zn-doped degenerate CuInSe2
002173 (1995) High field positive magnetoresistance in the variable range hopping regime in n-type CuInSe2
002220 (1994-12-15) Low-field negative magnetoresistance in the variable-range-hopping regime in copper indium diselenide
002512 (1993) Magnétorésistance de n-CuInSe2 en régime métallique
002672 (1993) Filling-factor-dependent cyclotron resonance in GaInAs/AlInAs modulation-doped single quantum wells
002812 (1992) Shubnikov-de Haas oscillations in n-CuInSe2
002881 (1992) Hopping conduction in copper indium diselenide

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Experimental study
7Indium selenides
6Copper selenides
6Magnetic field effects
6Magnetoresistance
5Semiconductor materials
5Ternary compounds
4Effective mass
4Temperature dependence
3Carrier density
3Electrical conductivity
3Gallium arsenides
3Hall effect
3Hopping
2Binary compounds
2Copper Indium Selenides Mixed
2Electron-impurity interactions
2Indium arsenides
2Inorganic compound
2Inorganic compounds
2Low temperature
2N-type conductors
2Photoluminescence
2Pulsed field
2Reflection spectrum
2Temperature
2Theoretical study
2Transport processes
2Very low temperature
1Activation energy
1Aluminium arsenides
1Band theory
1Bound exciton
1Carrier mobility
1Conduction bands
1Copper tellurides
1Critical field
1Cyclotron resonance
1Diamagnetism
1Donor center
1Doped materials
1Doping
1Electric conductivity
1Electron electron interaction
1Electron gas
1Electron phonon interaction
1Electron-phonon interactions
1Electronic density of states
1Electronic structure
1Energy gap
1Energy-level splitting
1Epitaxial layers
1Excitons
1Far infrared radiation
1Fermi surface
1Fill factor
1Heterostructures
1High field
1High pressure
1Hopping conductivity
1Impurity ionization
1Indium antimonides
1Indium tellurides
1Infrared spectra
1Level crossing
1Line shape
1Luminescence
1Magnetic field
1Magnetic field effect
1Magnetoconductivity
1Metal-insulator transformations
1Modulation doping
1Molecular beam epitaxy
1Monocrystals
1Mott transition
1N type semiconductor
1Negative magnetoconductivity
1Optimization
1Permittivity
1Pressure effects
1Quantum dots
1Quantum oscillation
1Quantum wells
1Scattering
1Self-assembled layers
1Sensors
1Shubnikov de Haas effect
1Single-particle model
1Spin waves
1Temperature effects
1Temperature range 0000-0013 K
1Temperature range 13-65 K
1Thermal stability
1Thickness
1Two-dimensional systems
1Zinc additions
1g factor
1n-type conductors
1p-type conductors

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