IndiumV3, France, Analysis, indexItem, Author.i, J. L. Lazzari

J. L. Laporte < J. L. Lazzari < J. L. Leclercq

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.

Ident.	Authors (with country if any)	Title
000249 (2011)		A multi-color quantum well photodetector for mid- and long-wavelength infrared detection
001F31 (1996)		High sensitivity 2.5 μm photodiodes with metastable GaInAsSb absorbing layer
001F52 (1996)		Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy
002264 (1994-08-01)		High temperature operation of GaInAsSb/AlGaAsSb double-heterostructure lasers emitting near 2.1 μm
002397 (1994)		High-power low-threshold Ga0.88In0.12As0.10Sb0.90/Al0.47Ga0.53As0.04Sb0.96 double heterostructure lasers grown by liquid phase epitaxy
002518 (1993)		Caractérisation au-dessous du seuil de doubles hétérostructures lasers GaInAsSb/GaAlAsSb émettant vers 2,37 μm
002598 (1993)		Optical properties and fluctuations of composition in Ga0.77In0.23As0.19Sb0.81 alloys
002628 (1993)		Low temperature photoluminescence spectra of Ga0.77In0.23As0.19Sb0.81 compounds
002692 (1993)		Electrical determination of band offsets in a p-Ga0.77In0.23AS0.20Sb0.80/n-GaSb type-II heterojunction
002854 (1992)		Liquid phase epitaxy and characterization of InAs1-x-ySbxPy on (100) InAs
002914 (1992)		Determination of electrical and optical parameters of Ga1-xInxAsySb1-y and Ga1-xAlxAsySb1-y thin layers grown on GaSb substrates by IR reflectivity

List of associated KwdEn.i

Nombre de documents	Descripteur
6	Experimental study
6	Gallium antimonides
5	Semiconductor materials
4	Gallium arsenides
4	Indium antimonides
4	Indium arsenides
4	Quaternary compounds
3	Band offset
3	Chemical composition
3	Electrical properties
3	Epitaxy
3	Gallium Indium Antimonides arsenides Mixed
3	Optical properties
3	Photoluminescence
2	Aluminium Gallium Antimonides arsenides Mixed
2	Aluminium antimonides
2	Aluminium arsenides
2	Binary compounds
2	Characterization
2	Crystal growth
2	Energy gap
2	Growth from liquid
2	Heterojunctions
2	Heterostructures
2	Inorganic compound
2	Laser diodes
2	Quantum wells
2	Semiconductor lasers
2	Thin film
1	Absorption coefficients
1	Aluminium Antimonides
1	Antimonides arsenides
1	Arrhenius equation
1	Cavity resonator
1	Conduction bands
1	Current density
1	DH lasers
1	Double heterojunction
1	Effective mass
1	Effective mass model
1	Electroluminescence
1	Epitaxial film
1	Excitons
1	Experiments
1	Fluctuations
1	Free carrier
1	Gain guided laser
1	Gallium Antimonides
1	Gallium Arsenides
1	Gallium indium arsenic tin absorbing layer
1	Gaussian distribution
1	Hamiltonians
1	Heteroepitaxy
1	Heterojunction photodiodes
1	High performance
1	High sensitivity photodiodes
1	Indium Antimonides arsenides phosphides
1	Indium Arsenides
1	Infrared detectors
1	Infrared reflection
1	LPE
1	Light emitting diodes
1	Line shape
1	Liquid phase
1	Liquid phase epitaxy
1	Low temperature
1	Mismatch lattice
1	Multi-element compounds
1	N-type conductors
1	Phase diagram
1	Phase equilibria
1	Photodetectors
1	Photodiodes
1	Production process
1	Quantum efficiency
1	Quaternary compound
1	Recombination
1	Reflectivity
1	Ribbons
1	Semiconducting gallium compounds
1	Semiconductor laser
1	Size effect
1	Solid phase metastable
1	Solid solution
1	Stimulated emission
1	Strains
1	Temperature dependence
1	Temperature range 273-400 K
1	Ternary compounds
1	Thickness

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   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    J. L. Lazzari
}}

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List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

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Index « Auteurs » - entrée « J. L. Lazzari »