Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. L. Benchimol »
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J. L. Auget < J. L. Benchimol < J. L. Bezy  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 31.
[0-20] [0 - 20][0 - 31][20-30][20-40]
Ident.Authors (with country if any)Title
001232 (2001) InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits
001374 (2000) TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures
001428 (2000) Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTs
001723 (1999) Hydrogen in Be-doped GaInAsP lattice matched to InP : diffusion and interactions with dopants
001864 (1998-05-18) Evidence of hydrogen-carbon interactions in plasma hydrogenated carbon-doped n-InP
001956 (1998) Photoluminescence of as-grown and hydrogenated carbon-doped indium phosphide
001A26 (1998) CBE growth of carbon doped InGaAs/InP HBTs for 25 Gbit/s circuits
001A30 (1998) Beam geometrical modelling of CBE on nonplanar substrate
001B62 (1997) Phototransistor TBH InGaAs/InP pour conversion optique/microondes
001D07 (1997) Base-collector leakage currents in InP/InGaAs double heterojunction bipolar transistors
001D68 (1996-08-15) Transport properties of hydrogenated p-GaInAs doped with carbon
001D85 (1996-06-24) p- and n-type carbon doping of InxGa1-xAsyP1-y alloys lattice matched to InP
001F28 (1996) Improved stability of C-doped GaAs grown by chemical beam epitaxy for heterojunction bipolar transistor applications
001F69 (1996) CBE growth of InGaAs(P) alloys using TDMAAs and TBP
001F71 (1996) Benefits of chemical beam epitaxy for micro and optoelectronic applications
002011 (1995-10-09) Be diffusion mechanisms in InGaAs during post-growth annealing
002102 (1995) Uniform selective area growth of GaAs and GaInP by low temperature chemical beam epitaxy
002148 (1995) Modern epitaxial techniques for HBT structures
002192 (1995) Dependence of InP and GaAs chemical beam epitaxy growth rate on substrate orientations ; applications to selective area epitaxy
002409 (1994) First hydride free GaInP/GaAs carbon doped HBT grown by CBE using DMAAs and TBP
002549 (1993) Stability of highly Be-doped GaAs/GaInP HBTs grown by chemical beam epitaxy

List of associated KwdEn.i

Nombre de
documents
Descripteur
22Experimental study
11Heterojunction transistor
10Epitaxy
9Gallium Arsenides
9Indium phosphides
9Semiconductor materials
8Indium Phosphides
6Binary compounds
6Crystal growth from vapors
6Gallium arsenides
6Inorganic compound
5Chemical beam condensation
5Chemical composition
5Photoluminescence
5Ternary compounds
4Binary compound
4Bipolar transistor
4Carbon additions
4Crystal growth
4Doping
4Epitaxial layers
4III-V compound
4III-V semiconductors
4Indium arsenides
3Aluminium Gallium Arsenides Mixed
3Bipolar transistors
3CBE
3Chemical beam epitaxy
3Doped materials
3Gallium Indium Arsenides Mixed
3Gallium Indium Phosphides Mixed
3Gallium phosphides
3Morphology
3Temperature
3Ternary compound
3Thin film
2Annealing
2Beryllium additions
2Carbon addition
2Current gain
2Diffusion
2Gallium Arsenides phosphides
2Gallium Indium Arsenides phosphides Mixed
2Heterojunction bipolar transistors
2Impurity states
2Indium Arsenides
2Indium Arsenides phosphides
2Kinetics
2Microelectronic fabrication
2Molecular beam condensation
2Passivation
2Quaternary compounds
2SIMS
2Selective area
2Semiconducting indium phosphide
2Semiconductor device
2Solid solution
2Substrates
2Superlattice
2Thin films
2Voltage current curve
1Acceptor center
1Beryllium
1Bipolar integrated circuits
1Bromides
1Carbon
1Characterization
1Charge carrier concentration
1Critical temperature
1Crystal doping
1Crystal orientation
1Current density
1Deep level
1Deformation
1Degradation
1Dense wavelength division multiplexing
1Diffusion profile
1Diffusivity
1Digital circuits
1Donors
1Doping profiles
1Double heterojunction
1Dry etching
1Electrical characteristic
1Electron density
1Electron mobility
1Epitaxial transistor
1Experiments
1Fabrication property relation
1Gain
1Gallium Indium Phosphorus Mixed
1Gallium Phosphides
1Growth
1Growth from liquid
1Growth mechanism
1Hall effect
1Hydrogen
1Hydrogen additions
1Hydrogenation
1Impurity diffusion

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