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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. Jacquet »
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J. J. Sanchez < J. Jacquet < J. Jancu  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000735 (2007) 1.55μm InP-based electrically-pumped VECSELs : comparison of buried and implanted tunnel junctions as current confinement schemes for the realization of large diameter devices
000A86 (2004) Room-temperature continuous-wave laser operation of electrically-pumped 1.55 μm VECSEL
000B98 (2004) 1.55 μm VCSELs with InP/air-gap distributed bragg reflectors
000F70 (2002) Monolithic tunable InP-based vertical cavity surface emitting laser
001289 (2001) 3.6-Mhz linewidth 1.55-μm monomode vertical-cavity surface-emitting laser
001785 (1999) 1-m W CW-RT monolithic VCSEL at 1.55 μm
001816 (1998-11) Quasi-CW room temperature operation of 1.52 μm InGaAsP/AlGaAs vertical cavity lasers obtained by localised fusion
001911 (1998) Undercut ridge structures : A novel approach to 1.3/1.55μm vertical-cavity lasers designed for continuous-wave operation
001A04 (1998) GaAlAs/GaAs metamorphic Bragg mirror for long wavelength VCSELs
001B84 (1997) Undercut ridge structures : A novel approach to 1.3/1.55-μm vertical-cavity surface-emitting lasers
001C14 (1997) Room-temperature pulsed operation of 1.3 μm vertical-cavity lasers including bottom InGaAsP/InP multilayer Bragg mirrors
001C36 (1997) Molecular beam epitaxy growth of 1.3 μm high-reflectivity AlGaAsSb/AlAsSb Bragg mirror
002158 (1995) Low dispersion penalty and wide temperature range operation over 120K with 1.55μm strained MQW-DFB laser module

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Semiconductor lasers
6Mirrors
5Semiconducting indium phosphide
5Vertical cavity laser
4Molecular beam epitaxy
4Theory
3Experiments
3III-V compound
3Surface emitting laser
3Surface emitting lasers
2Binary compound
2Continuous wave lasers
2Dielectric materials
2Experimental study
2Gallium Arsenides
2Gallium arsenides
2III-V semiconductors
2Indium Phosphides
2Indium phosphides
2Injection current
2Laser modes
2Optoelectronic device
2Output power
2Quaternary compound
2Semiconducting aluminum compounds
2Semiconducting gallium arsenide
2Semiconductor growth
2Semiconductor quantum wells
2Vertical cavity surface emitting lasers (VCSEL)
1Air gap
1Aluminium compounds
1Binary compounds
1Bragg mirror
1Bragg reflection
1Calcium
1Cavity
1Cavity resonator
1Circuit design
1Continuous wave
1Current injection
1Diaphragm
1Dielectric mirror
1Dielectric mirrors
1Dislocations (crystals)
1Distributed Bragg mirrors (DBR)
1Distributed Bragg reflection
1Distributed Bragg reflector (DBR) lasers
1Distributed Bragg reflector lasers
1Distributed feedback laser
1Doping (additives)
1Electric currents
1Electrical characteristic
1Electromagnetic wave diffraction
1Experimental result
1External cavity
1Eye diagram
1Fiber optic networks
1Gallium phosphides
1Gas detectors
1Heterodyning
1Indium arsenides
1Indium compounds
1Indium phosphide
1Infrared radiation
1Infrared spectra
1Ion implantation
1Laser cavity resonators
1Laser materials
1Laser pulses
1Laser variables measurement
1Light absorption
1Light dispersion
1Light emitting diode
1Light reflection
1Linewidth
1MOVPE method
1Metamorphic Bragg mirror
1Microelectromechanical device
1Microelectronic fabrication
1Micromachining
1Mirror
1Monolithic integrated circuit
1Monolithic integrated circuits
1Multilayer Bragg mirrors
1Multiple quantum well
1Optical fabrication
1Optical fiber
1Optical materials
1Optical multilayers
1Optical pumping
1Optical system
1Optical telecommunication
1Optical transmission
1Phosphorus compounds
1Q factor
1Rapid thermal annealing
1Room temperature
1Second harmonic generation
1Semiconducting indium gallium arsenide
1Semiconductor device manufacture

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