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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. F. Palmier »
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J. F. Murray < J. F. Palmier < J. F. Pone  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
001699 (1999) Modeling and dynamic simulation of ultraviolet induced growing interfaces
001704 (1999) MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP
001913 (1998) Time-resolved photoluminescence study of GaInAs/AlGaInAs superlattices
001971 (1998) Millimetre-wave negative differential conductance in GaInAs/AlInAs semiconductor superlattices
001A42 (1998) A Monte carlo simulation of silicon nitride thin film microstructure in ultraviolet localized-chemical vapor deposition
001B51 (1997-01-15) Band discontinuities in InxGa1-xAs-InP and InP-AlyIn1-yAs heterostructures: Evidence of noncommutativity
001C10 (1997) Self-consistent 1-D solution of multiquantum-well laser equations
001E44 (1996) Photodiode de type Métal-Semiconducteur-Métal (MSM) sur substrat d'InP
001E78 (1996) Short period superlattices under hydrostatic pressure
002373 (1994) Observation of Wannier-Stark ladders in GaInAs-AlGaInAs semiconductor superlattices
002377 (1994) Microwave miniband NDC in GaInAs/AlInAs superlattices
002590 (1993) Optically induced excitonic distribution in GaInAs-AlGaInA semiconductor superlattices under an electric field
002957 (1991) Wavelength dependence of temporal response of high-speed GaInAs/AIInAs superlattice photodiodes

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Gallium arsenides
5Experimental study
5Indium arsenides
5Superlattices
5Ternary compounds
4Aluminium arsenides
3Excitons
3Quaternary compounds
3Theoretical study
2Aluminium Indium Arsenides Mixed
2CVD
2Experiments
2Gallium Indium Arsenides Mixed
2III-V compound
2Monte Carlo methods
2Negative differential conductivity
2Photodiode
2Photoluminescence
2Semiconducting indium phosphide
2Semiconducting silicon
2Semiconductor lasers
2Semiconductor materials
2Silicon nitrides
2Theory
1Aluminium Arsenides
1Approximation theory
1Band structure
1Binding energy
1Bloch transport
1Charge carrier scattering
1Conduction bands
1Crystal lattices
1Current density
1Distributed Bragg reflector
1Electric current measurement
1Electrical characteristic
1Electrical properties
1Electro-optical effects
1Electronic dispersion
1Energy diagram
1Energy-level density
1Energy-level splitting
1Energy-level transitions
1Envelope function approximation
1Fabrication structure relation
1Free carrier
1Frequency response
1Gallium Arsenides
1Gallium phosphides
1Graded junction
1Heterojunctions
1Hydrogen additions
1Hydrostatic pressure
1IV characteristic
1Illumination
1Indium Arsenides
1Indium Phosphides
1Indium compounds
1Indium phosphides
1Interband transitions
1Iterative methods
1Low pressure metallorganic vapor phase epitaxy
1MSM structure
1Metallorganic vapor phase epitaxy
1Metering
1Microstructure
1Millimeter wave radiation
1Mirrors
1Modelling
1Molecular beam epitaxy
1Monochromatic radiation
1Multi-element compounds
1Multiple quantum well
1Non radiative recombination
1Nucleation
1Numerical simulation
1Operation study
1Optoelectronic device
1Passband
1Photoconductivity
1Photoemission
1Photolysis
1Production process
1Pulse response
1Quantity ratio
1Refractive index
1Roughness
1Semiconducting aluminum compounds
1Semiconducting gallium arsenide
1Semiconducting gallium compounds
1Semiconducting indium compounds
1Semiconductor device structures
1Semiconductor doping
1Semiconductor heterojunctions
1Semiconductor substrate
1Semiconductor superlattices
1Short period superlattices
1Simulation
1Size effect
1Substrates

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