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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. F. Bresse »
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J. F. Bernaudin < J. F. Bresse < J. F. Bretagne  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
001556 (1999-07) Low damage dry etching of III-V materials for heterojunction bipolar transistor applications using a chlorinated inductively coupled plasma
001B13 (1997-07) Base metallization stability in InP/InGaAs heterojunction bipolar transistors and its influence on leakage currents
001B33 (1997-05) Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4
001F79 (1996) A new analytical model for cathodoluminescence emission as a function of the beam energy in GaAs and InP materials
002967 (1991) Thermally stable low resistance ohmic contacts to n-type gallium arsenide : magnetron cathodic sputter-deposited NiInW contacts
002E06 (1988) Evolution of the electron acoustic signal as function of doping level in III-V semiconductors
002E78 (1987) Study of silicon-doped AlxGayIn1-x-yAs quaternary layers by localized cathodoluminescence and electron acoustic microscopy
003018 (1986) InGaAsP superlattices grown by liquid-phase epitaxy
003042 (1986) Characterization of Au-n-InP schottky diodes by EBIC

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
4III-V semiconductors
3Cathodoluminescence
3Gallium arsenides
3Indium compounds
3Inorganic compound
2Acoustic microscopy
2Aluminium Gallium Indium Arsenides Mixed
2Annealing
2Deep level
2Gallium Arsenides
2Heterojunction bipolar transistors
2Impurity density
2Semiconductor materials
2Silicon
2Sputter etching
2Thin film
1Absorptance
1Acceptor donor pair
1Atomic force microscopy
1Auger effect
1Auger electron spectra
1Beryllium
1Binary compounds
1Cathodic sputtering
1Chemical composition
1Chemical interdiffusion
1Contact resistance
1Crystal defect level
1Crystal defects
1Crystal growth
1Diffusion
1Diode
1EBIC mode
1Electron beam lithography
1Electron microscopy
1Energy gap
1Epitaxy
1Gallium Indium Arsenides phosphides Mixed
1Gold
1Growth from liquid
1Impurity level
1Indium Nickel Tungsten
1Indium Phosphides
1Indium phosphides
1Lattice thermal conductivity
1Leakage currents
1Magnetron
1Non stoichiometric composition
1Ohmic contact
1Ohmic contacts
1Optical absorption
1Photoluminescence
1Precipitation
1Quantum yield
1Recombination
1Refractory
1SEM
1Scanning electron microscopy
1Schottky barrier diode
1Secondary ion mass spectra
1Semiconductor device metallizing
1Spectral line profile
1Spectral line shift
1Superlattice
1Surface structure
1TEM
1Thermal conductivity
1X ray diffraction
1surface composition

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