Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. Dipersio »
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J. Dion < J. Dipersio < J. Ditusa  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 4.
Ident.Authors (with country if any)Title
000D47 (2003) Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs
001322 (2000-09) Comparison of In0.33Al0.67As/In0.34Ga0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers
001376 (2000) Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps
001974 (1998) MBE grown InAlAs/InGaAs lattice mismatched layers for HEMT application on GaAs substrate

List of associated KwdEn.i

Nombre de
documents
Descripteur
4Molecular beam epitaxy
3Aluminium arsenides
3Experimental study
3Gallium arsenides
3Indium arsenides
2Buffer layer
2High electron mobility transistor
2Ternary compound
1Aluminium compounds
1Atomic force microscopy
1Concentration effect
1Dislocation
1Fabrication structure relation
1High electron mobility transistors
1III-V semiconductors
1Indium compounds
1Metamorphic transistor
1Microelectronic fabrication
1Microstructure
1Mismatch lattice
1Morphology
1Relaxation
1Surface structure
1Temperature effect
1Ternary compounds

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