J. De Boeck < J. Decobert < J. Dehaudt

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 26.
[0-20] [0 - 20][0 - 26][20-25][20-40]

Ident.	Authors (with country if any)	Title
000020 (2013)		Structural characterization of selectively grown multilayers with new high angular resolution and sub-millimeter spot-size x-ray diffractometer
000045 (2013)		Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits
000193 (2011)		New InGaAs SWIR imaging solutions from III-VLab
000522 (2008)		Optically in-situ monitored growth of carbon doped InAlAs by LP-MOVPE using CBr4
000541 (2008)		Micro-Raman for compositions characterization of selective area growth of AlxGayIn1-x-yAs materials by metal-organic vapor-phase epitaxy
000589 (2008)		Demonstration of planar thick InP layers by selective MOVPE
000659 (2007)		Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy
000859 (2006)		All-optical extinction-ratio enhancement of a 160 GHz pulse train by a saturable-absorber vertical microcavity
000A74 (2004)		Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD
000A95 (2004)		Planarized selective regrowth of InP:Fe by LP-MOVPE using tertiarybutylchloride for high-speed modulator devices
000B20 (2004)		MOVPE growth of A1GaInAs-InP highly tensile-strained MQWs for 1.3 μm low-threshold lasers
000B96 (2004)		42 GHz bandwidth InGaAlAs/InP electro absorption modulator with a sub-volt modulation drive capability in a 50 nm spectral range
000B99 (2003-12-29)		Ultrafast response (∼2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 μm
000D62 (2003)		Growth and characterization of Si, S and Zn-doped InP in selective area growth conditions
000D78 (2003)		Electrical properties of 1.55 μm sensitive ion-irradiated Ingaas with subpicosecond carrier lifetime
001032 (2002)		DC-92 GHz ultra-broadband high gain InP HEMT amplifier with 410 GHz gain-bandwidth product
001050 (2002)		A high gain-bandwidth product InP HEMT distributed amplifier with 92 GHz cut-off frequency for 40 Gbit/s applications and beyond
001291 (2001)		(InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength range
001343 (2000-03-01)		Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor
001410 (2000)		Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE
001590 (1999-02-15)		Oxide confining layer on an InP substrate

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List of associated KwdEn.i

Nombre de documents	Descripteur
12	III-V semiconductors
10	Experimental study
10	MOVPE method
7	III-V compound
7	VPE
6	Gallium arsenides
6	Photoluminescence
5	Indium arsenides
5	Selective area
5	Selective growth
4	Aluminium arsenides
4	Semiconductor lasers
4	Theory
4	Vapor phase
3	Crystal growth from vapors
3	Current density
3	Epitaxy
3	Gallium Arsenides
3	Growth mechanism
3	High electron mobility transistors
3	Indium Phosphides
3	Indium compounds
3	Indium phosphide
3	Low pressure
3	Operating conditions
3	Semiconducting indium gallium arsenide
3	Semiconducting indium phosphide
3	Semiconductor growth
2	Aluminium compounds
2	Auger electron spectrometry
2	Bandwidth
2	Binary compound
2	Carrier mobility
2	Diffusion
2	Doping
2	Electroabsorption modulator
2	Energy gap
2	Epitaxial layers
2	Growth from vapor
2	Growth rate
2	Hall effect
2	High electron mobility transistor
2	Impact ionization
2	Indium
2	Indium Arsenides
2	Indium phosphides
2	Inorganic compound
2	Metallorganic vapor phase epitaxy
2	Modelling
2	Multiple quantum well
2	Nanostructured materials
2	Optical microscopy
2	Organometallic compound
2	Quantum well lasers
2	Quantum wells
2	Quaternary compounds
2	Semiconductor device structures
2	Substrates
2	Synchrotron radiation
2	Ternary compounds
2	Theoretical study
2	Waveguides
2	XRD
1	Absorption spectrum
1	All optical circuit
1	Aluminium
1	Aluminium Gallium Arsenides Mixed
1	Aluminium Gallium Indium Arsenides Mixed
1	Aluminium Indium Arsenides Mixed
1	Ambient temperature
1	Angular resolution
1	Anisotropy
1	Annealing
1	Aperture
1	Apertures
1	Application
1	Arrays
1	Atmospheric pressure
1	Autocorrelations
1	Barrier layer
1	Binary compounds
1	Breakdown voltage
1	Broadband amplifiers
1	CVD
1	Carbon additions
1	Carrier concentration
1	Carrier lifetime
1	Carrier lifetimes
1	Characterization
1	Circuit design
1	Composite canal
1	Composite material
1	Computerized simulation
1	Concentration distribution
1	Coplanar line
1	Cross section
1	Cross sections
1	Crystal growth
1	Cut off frequency
1	Cutoff frequency

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