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Index « Auteurs » - entrée « J. Dazord »
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J. Davenas < J. Dazord < J. De Boeck  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000A59 (2004) Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission
000B54 (2004) Enhancement of atomic ordering in In0.53Ga0.47As/InP: a comparison between trimethylarsenic and arsine
001571 (1999-05-15) Strain-induced surface morphology of slightly mismatched InxGa1-xAs films grown on vicinal (100) InP substrates
001647 (1999) Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine
001648 (1999) Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates
001714 (1999) Initial stages of InP/GaP (100) and (111)A, B grown by metal organic chemical vapor deposition
001729 (1999) Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine
001C87 (1997) Effect of methyl surface saturation during growth interruption sequences of metalorganic vapor-phase epitaxy of In0.53Ga0.47As using trimethylarsenic
001D77 (1996-07-08) Trimethylarsenic as an alternative to arsine in the metalorganic vapor phase epitaxy of device quality In0.53Ga0.47As/InP

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Experimental study
7Atomic force microscopy
7Gallium arsenides
6Indium arsenides
6Semiconductor materials
5Ternary compounds
4Crystal growth from vapors
4Epitaxial layers
4MOVPE method
4Morphology
3Indium phosphides
3Photoluminescence
3Precursor
3Surfaces
2Binary compounds
2Growth mechanism
2Heterojunctions
2III-V semiconductors
2Island structure
2Mismatch lattice
2Organic arsine
2Surface structure
2Tertiary arsine
2Thin films
2Transmission electron microscopy
2VPE
1Arsine
1Binary compound
1Buffer layer
1Crystal defects
1Dislocations
1Electron diffraction
1Electron mobility
1Experimental result
1Gallium Phosphides
1Hall effect
1Heteroepitaxy
1III-V compound
1Indium Phosphides
1Indium compounds
1Interruption
1Interrupts
1Layer thickness
1MOCVD
1Microelectronic fabrication
1Microstructure
1Nanostructure
1Optical properties
1Quantum dots
1Quantum size effect
1Rutherford backscattering
1Saturation
1Self organization
1Semiconductor epitaxial layers
1Semiconductor growth
1Sequence
1Spectral line shift
1Stranski-Krastanov mode
1Substrates
1Surface topography
1Temperature dependence
1Vicinal surface

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