Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. Camassel »
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List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
001241 (2001) Growth of bulk and superlattice GaAsSb layers on InP
001A10 (1998) Ellipsometric characterisation of ordered Ga0.5In0.5P
001A27 (1998) Bridgman solidification of GaSb in space
001D89 (1996-06-15) Shallow strained InxGa1-xAs/InyGa1-yAs superlattices embedded in p-i-n diodes: Structural properties and optical response
002002 (1995-11) Propriétés structurales et optiques des superréseaux InGaAs/InGaAs: mise en évidence d'une modulation tout optique
002016 (1995-10) Effets d'interdiffusion sur les hétérostructures III-V
002348 (1994) Structural investigations of InGaAs/InGaAsSLSs for optoelectronic device applications
002363 (1994) Quantitative investigation of interdiffusion effects in balanced-strain InGaAs(P)/InGaAsP heterostructures: constant x vs. constant y
002531 (1993) Thermal stability of InGaAs/InGaAsP quantum wells
002591 (1993) Optical tools for intermixing diagnostic : application to InGaAs/InGaAsP microstructures
002608 (1993) Non-destructive approaches to interdiffusion phenomena across GaInAs/GaInAsP interfaces : photoluminescence vs. Raman
002614 (1993) Morphology of InGaAs/InP QWs : from excitonic spectroscopy to HR-TEM analyses
002639 (1993) Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence
002664 (1993) Growth and characterization of In0.53Ga0.47As/InxGa1-xAs strained-layer superlattices
002679 (1993) Evidence for non-uniform interface thickness in strained InGaAs/InP quantum wells
002699 (1993) Effect of thermal diffusion on the excitonic reflectivity spectra of InGaAs/GaAs quantum wells
002A33 (1991) Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence
002B24 (1990) Optical properties of GaInAs/InP multi-quantum wells grown by low-pressure MOVPE

List of associated KwdEn.i

Nombre de
documents
Descripteur
15Experimental study
11Semiconductor materials
9Ternary compounds
8Gallium arsenides
8Indium arsenides
7Gallium Indium Arsenides Mixed
7Interdiffusion
7Photoluminescence
5Indium phosphides
5Superlattices
4Binary compounds
4Crystal growth
4Epitaxy
4Indium Phosphides
4Optical properties
4Quantum well
3Absorption spectra
3Energy-level transitions
3Inorganic compound
3Interface
3Optoelectronic device
3Organometallic compound
3Thickness
3Thin films
3XRD
2Annealing
2Chemical vapor deposition
2Diffusion
2Diffusion coefficient
2Electronic structure
2Epitaxial layers
2Excitons
2Gallium Indium Arsenides phosphides Mixed
2Gallium phosphides
2Heterostructures
2III-V semiconductors
2Interband transitions
2Interface structure
2Microstructure
2Mismatch lattice
2Multiple quantum well
2Operating mode
2Optical transition
2Optoelectronic devices
2Quantum wells
2Raman spectrometry
2Strained quantum well
2TEM
2Theoretical study
1Aluminium arsenides
1Anisotropy
1Application
1Arsenic Gallium Indium Phosphides Mixed
1Barrier height
1Blueshift
1Bridgman method
1Characterization
1Chemical composition
1Concentration distribution
1Confinement
1Crucibles
1Crystal growth from melts
1Crystal growth from vapors
1Crystal structure
1Derivative
1Diffusion equation
1Dual phase structure
1Effective potential
1Electrical conductivity
1Electron diffraction
1Ellipsometry
1Epitaxial film
1Exciton
1Gallium Antimonides arsenides
1Gallium antimonides
1Growth from vapor
1Heat treatment
1III-V compound
1In situ
1Indium antimonides
1Infrared spectra
1Inorganic compounds
1Lattice parameters
1Light dispersion
1Low pressure
1MOCVD
1Microelectronics
1Microgravity
1Miniband
1Models
1Nanostructures
1Optical absorption
1Optical method
1Optical modulation
1Optical spectrometry
1Order degree
1Ordered systems
1Polycrystals
1Preparation
1Property structure relationship

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