Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. C. Portal »
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J. C. Poignet < J. C. Portal < J. C. Renaud  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 34.
[0-20] [0 - 20][0 - 34][20-33][20-40]
Ident.Authors (with country if any)Title
000846 (2006) Current-driven breakdown of the quantized Hall states of a broken-gap 2D electron-hole system
000C02 (2003-12-15) Insulating states of a broken-gap two-dimensional electron-hole system
001263 (2001) Edge effects in an insulating state of an electron-hole system in magnetic field
001278 (2001) Breakdown of the quantum Hall effect in an electron-hole system
001317 (2000-09-11) Metal-Insulator Oscillations in a Two-Dimensional Electron-Hole System
001804 (1998-11-15) Determination of the phase of magneto-intersubband scattering oscillations in heterojunctions and quantum wells
001829 (1998-09-15) Magnetic breakdown in the semimetallic InAs/GaSb system
001B49 (1997-01-27) Photoluminescence spectroscopy of self-assembled InAs quantum dots in strong magnetic field and under high pressure
001C70 (1997) Growth of InAs/GaSb strained layer superlattices by MOVPE. III. Use of UV absorption to monitor alkyl stability in the reactor
001D35 (1996-11-04) Magnetoresistance size effects in a three-dimensional lattice of InSb quantum dots
001E09 (1996-04-15) Zero-Hall-resistance state in a semimetallic InAs/GaSb superlattice
001E78 (1996) Short period superlattices under hydrostatic pressure
001F06 (1996) Magnetoresistance oscillations due to intersubband scattering in a two-dimensional electron system
002051 (1995-05-15) Influence of electrode Fermi energy on interband tunneling
002379 (1994) Magneto-transport investigation of Si-doped n+ Al0.48In0.52As : observation of the DX centre
002389 (1994) Left and right tunnelling times of electrons from quantum wells in double-barrier heterostructures investigated by the stabilization method
002519 (1993) Γ-X intervalley tunneling in InAs/AlSb resonant tunneling diodes
002568 (1993) Resonant and off-resonant phenomena in double-barrier interband tunneling structures
002605 (1993) Observation of a two dimensional hole gas in a GaInP/GaAs heterojunction
002964 (1991) Transverse magnetic field effects on the resonant tunneling current
002A20 (1991) High-pressure investigation of an (InAl)As-(InGa)As resonant tunnelling double-barrier structure

List of associated KwdEn.i

Nombre de
documents
Descripteur
19Experimental study
13Semiconductor materials
11Heterojunction
9Inorganic compound
9Quantum Hall effect
8Gallium Indium Arsenides Mixed
8Indium arsenides
7Shubnikov de Haas effect
6Electron gas
6Hydrostatic pressure
6Indium Phosphides
5Binary compounds
5Charge carrier concentration
5Gallium antimonides
5Indium compounds
5Magnetoconductivity
5Photoconductivity
5Resonant tunnel effect
4Aluminium Indium Arsenides Mixed
4Band structure
4Gallium Arsenides
4Magnetic field effects
4Magnetoresistance
4Solid solid interface
4Two dimensional model
4Voltage current curve
3Aluminium arsenides
3Double barrier structure
3Effective mass
3Electron hole pair
3Fermi level
3Gallium arsenides
3Gallium compounds
3High field
3III-V semiconductors
3Indium Arsenides
3Interface states
3Pressure
3Shubnikov-de Haas effect
3Temperature
3Ternary compounds
3Theoretical study
3Tunnel effect
3Two dimensional system
3Two-dimensional electron gas
2Activation energy
2Aluminium Antimonides
2Arsenic compounds
2Carrier density
2Charge carrier mobility
2Energy gap
2Epitaxial layers
2Gallium Antimonides
2Gallium Indium Phosphides Mixed
2Hall effect
2Heterojunctions
2Heterostructures
2Landau levels
2Magnetic field
2Magnetooscillatory properties
2Molecular beam epitaxy
2Planar doping
2Quantum effect
2Semiconductor heterojunctions
2Semiconductor quantum wells
2Semiconductor superlattices
2Silicon
2Subband
2Thin films
2Transport process
2Two-dimensional systems
1Aluminium Gallium Indium Arsenides Mixed
1Aluminium antimonides
1Aluminium compounds
1Antimony compounds
1Approximation theory
1Asymmetry
1Atmospheric pressure
1Atomic force microscopy
1Bloch transport
1Charge carriers
1Chemical vapor deposition
1Compensation
1Complex defect
1Conduction bands
1Confinement
1Critical current density
1Critical field
1Critical temperature
1Crystal growth
1Crystal growth from vapors
1Cyclotron resonance
1Diode
1Donor center
1Doping
1Double barrier
1Double heterojunction
1Edge effect
1Electrical conductivity
1Electrodes

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