Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. C. Manifacier »
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J. C. Maan < J. C. Manifacier < J. C. Mathieu  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 4.
Ident.Authors (with country if any)Title
000005 (2014) Backgating effect in III-V MESFET's: A physical model
000069 (2013) Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes
000294 (2010) Multiple steady state current-voltage characteristics in drift-diffusion modelisation of N type and semi-insulating GaAs Gunn structures
000489 (2008) Theoretical and numerical investigations of carriers transport in N-semi-insulating-N and P-semi-insulating-P diodes : A new approach

List of associated KwdEn.i

Nombre de
documents
Descripteur
4Binary compound
4Indium phosphide
4Silicon
4Space charge
4n type semiconductor
3Diode
3Drift mobility
3Electric field
3Electrical characteristic
3p type semiconductor
2Ambipolar diffusion
2Analytical method
2Buried heterostructures
2Charge carrier density
2Charge transport
2Deep level
2Free carrier
2Free electron
2Numerical simulation
2Radiation detector
2Thermal equilibrium
2Transport process
1Back surface
1Bias
1Buffer layer
1Bulk effect
1Buried laser
1Carrier current
1Charge carrier mobility
1Current control
1Diffusion length
1Drift velocity
1Durability
1Electron density
1Electron drift
1Electron injection
1Extrinsic semiconductor
1Field effect transistor
1Gallium phosphide
1Gunn effect
1Hall effect
1Impurity density
1Instability
1Insulating material
1Integrated circuit
1LSI circuit
1Laser beam
1MOS technology
1MOSFET
1Metal semiconductor field effect transistor
1Multiple voltage
1Negative differential conductivity
1Neon
1Non equilibrium conditions
1Parasitic behavior
1Reliability
1Residual impurity
1Schottky barrier
1Selector switch
1Si junctions
1Stability
1Steady state
1Ternary compound
1Trap
1Voltage current curve
1Voltage threshold
1Wide band gap semiconductors
1n channel
1p n junction

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