Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. C. Harmand »
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J. C. Guillaume < J. C. Harmand < J. C. Joubert  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 52.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000431 (2009) Interdot carrier's transfer via tunneling pathway studied from photoluminescence spectroscopy
000501 (2008) Strain effects of InP/Si and InP/porous Si studied by spectroscopic ellipsometry
000523 (2008) Optical properties of GaInNAsSb/GaAs/GaAs1-xNx (x ≃ 10%) saturable absorber quantum wells
000636 (2007) Photoluminescence properties of a Si doped InGaAs/InGaAlAs superlattice
000A05 (2005) Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots
000A28 (2004-05-17) GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission
000A31 (2004-05-03) Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb-GaInAs/GaAs bilayer quantum wells
000A96 (2004) Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
000B31 (2004) Investigation of recombination processes involving defect-related states in (Ga, In)(As, Sb, N) compounds
000B53 (2004) Experimental investigation of the CMN matrix element in the band anticrossing model for GaAsN and GaInAsN layers
000B60 (2004) Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy
000B95 (2004) 9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm
000C18 (2003-08-18) Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs
000C19 (2003-08-18) Influence of carrier localization on modulation mechanism in photoreflectance of GaAsN and GaInAsN
000D88 (2003) Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 μm wavelength
000E59 (2002-06-01) Photoluminescence study of interfaces between heavily doped Al0.48In0.52As:Si layers and InP (Fe) substrates
001006 (2002) High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes
001070 (2001-10-22) Comparison of light- and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbers
001309 (2000-10-16) Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
001342 (2000-03-13) Ultrafast saturable absorption at 1.55 μm in heavy-ion-irradiated quantum-well vertical cavity
001460 (2000) Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInas-distributed Bragg mirrors on InP

List of associated KwdEn.i

Nombre de
documents
Descripteur
36Experimental study
30Gallium arsenides
18Indium arsenides
17III-V semiconductors
14Aluminium arsenides
13Molecular beam epitaxy
13Photoluminescence
12Indium compounds
11Ternary compounds
10Semiconductor materials
9Quaternary compounds
9Semiconductor quantum wells
9Superlattices
6Excitons
6Experiments
6Quantum wells
5Aluminium compounds
5Indium Phosphides
5Photoreflectance
4Binary compounds
4Conduction bands
4Gallium Arsenides
4III-V compound
4Indium Arsenides
4Interface states
4Quantum well lasers
4Semiconducting aluminum compounds
4Semiconducting indium phosphide
4Semiconductor lasers
4Substrates
4Ternary compound
3Aluminium Indium Arsenides Mixed
3Band structure
3Binary compound
3Crystal growth from vapors
3Electro-optical effects
3Energy gap
3Gallium compounds
3Gallium nitrides
3Indium nitrides
3Multi-element compounds
3Optical bistability
3Semiconducting gallium arsenide
3Semiconductor device structures
3Semiconductor epitaxial layers
3Silicon
3Time resolved spectra
2Aluminum Arsenides
2Annealing
2Crystal orientation
2Distributed Bragg reflector lasers
2Electrical conductivity
2Electrical properties
2Electronic structure
2Electrooptical devices
2Electrooptical modulator
2Energy levels
2Envelope function
2Gallium Indium Arsenides Mixed
2Gallium antimonides
2Heavily doped semiconductors
2High electron mobility transistor
2Indium phosphides
2Infrared spectra
2Interband transitions
2Ion beam effects
2Light absorption
2Light modulation
2Light modulators
2Microelectronic processing
2Mirrors
2Multiple quantum well
2Negative differential conductivity
2Non radiative recombination
2Optical modulator
2Optical modulators
2Optical properties
2Optical pumping
2Optical saturable absorption
2Photoconductivity
2Quantum dots
2Quaternary compound
2Reflection spectrum
2Semiconducting indium compounds
2Semiconductor doping
2Semiconductor growth
2Semiconductor heterojunctions
2Semiconductor superlattices
2Silicon additions
2Strained quantum well
2Surfactants
2Temperature dependence
2Theoretical study
2Theory
2Thermal annealing
2Transmission electron microscopy
1Absorption spectra
1Absorptivity
1Activation energy
1Aluminium Arsenides

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