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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. Bouix »
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J. Bouhou < J. Bouix < J. Bourgoin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
001455 (2000) Energy barrier for the growth transition step-flow/step-bunching during epitaxy of InP/InP
001571 (1999-05-15) Strain-induced surface morphology of slightly mismatched InxGa1-xAs films grown on vicinal (100) InP substrates
001647 (1999) Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine
001648 (1999) Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates
001729 (1999) Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine
001C87 (1997) Effect of methyl surface saturation during growth interruption sequences of metalorganic vapor-phase epitaxy of In0.53Ga0.47As using trimethylarsenic
001D06 (1997) Behaviour of vicinal InP surfaces grown by MOVPE : exploitation of AFM images
001D77 (1996-07-08) Trimethylarsenic as an alternative to arsine in the metalorganic vapor phase epitaxy of device quality In0.53Ga0.47As/InP
002743 (1993) A new organoindium precursor for electronic materials
002790 (1992) Use of high purity trimethylindium-trimethylamine adduct in MOVPE of InP

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Experimental study
8Semiconductor materials
6Atomic force microscopy
6MOVPE method
5Gallium arsenides
5Indium phosphides
4Crystal growth from vapors
4Epitaxial layers
4Indium arsenides
4Precursor
4Ternary compounds
3Growth mechanism
3Morphology
3Surfaces
3Thin films
3Vicinal surface
2Binary compounds
2Growth from vapor
2Heterojunctions
2Indium Phosphides
2Mismatch lattice
2Operating mode
2Organic arsine
2Organometallic compound
2Photoluminescence
2Substrates
2Surface structure
2Tertiary arsine
2Thin film
1Annealing
1Arsine
1Buffer layer
1Crystal growth
1Crystal orientation
1Differential scanning calorimetry
1Dislocations
1Electron mobility
1Epitaxy
1Hall effect
1III-V semiconductors
1Indium compounds
1Inorganic compound
1Interruption
1MOCVD
1Pressure
1Raman spectrum
1Roughness
1Saturation
1Semiconductor epitaxial layers
1Semiconductor growth
1Sequence
1VPE

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
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         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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