Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. Bougnot »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
J. Bougdira < J. Bougnot < J. Bouhou  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
002663 (1993) Growth and characterization of n-type (Te) doped metal organic vapor phase epitaxy GaInSb
002849 (1992) MOVPE growth Ga0.6In0.4Sb photodiodes for 5.55 μm detection
002850 (1992) MOCVD growth of CuInSe2 : first results
002874 (1992) InGaSb/GaSb photodiodes growth by MOVPE
002A18 (1991) Improvement of the crystalline, optical and electrical quality of MOVPE GaInSb layers
002D94 (1988) Growth of GaInAsSb alloys by MOCVD and characterization of GaInAsSb/GaSb p-n photodiodes
002E65 (1987) Thin film solar cells based on the chalcopyrite semiconductors Cu(Ga,In)Se2. Research and development on sprayed CdS-CuInSe2 thin film solar cells
002E81 (1987) Sprayed CdS/CuInSe2 solar cells: first results
003039 (1986) Chemical spray pyrolysis of CuInSe2 thin films
003124 (1983) Influence du dopage du CdS sur la stabilité de la cellule Cu2S-CdS «spray»

List of associated KwdEn.i

Nombre de
documents
Descripteur
7Experimental study
6Epitaxy
6Inorganic compound
6Organometallic compound
6Thin film
5Gallium Indium Antimonides Mixed
5Growth from vapor
4Solar cell
4X ray diffraction
3Cadmium Sulfides
3Chemical composition
3Chemical spray deposition
3Crystal growth
3Photodiode
2Buffer layer
2Characterization
2Charge carrier concentration
2Chemical vapor deposition
2Copper Indium Selenides
2Doping
2Electrical properties
2Heterojunction
2Morphology
2Scanning electron microscopy
2Semiconductor materials
2Solid solution
1Chalcopyrite
1Charge carrier mobility
1Controlled atmosphere
1Copper Indium Selenides Mixed
1Copper Sulfides
1Crystalline structure
1Electrical conductivity
1Energy band
1Equipment
1France
1Gallium Antimonides
1Gallium Indium Antimonides arsenides Mixed
1Hall effect
1Homojunction
1Influence
1Infrared detection
1Kinetics
1Manufacturing process
1Materials
1Microstructure
1Mismatch lattice
1Operating mode
1Optical absorption
1Optical microscopy
1Optical properties
1Optical transmission
1Passivation
1Phase diagram
1Photodetector
1Precursor
1Pressure
1R and D program
1Reactor
1Secondary ion mass spectrometry
1Semiconductor device
1Solar energy
1Stability
1Support
1Temperature
1Ternary system

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "J. Bougnot" 
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "J. Bougnot" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    J. Bougnot
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024