Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. Barrau »
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List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]
Ident.Authors (with country if any)Title
000B79 (2004) Band structure calculations for dilute nitride quantum wells under compressive or tensile strain
000E01 (2003) Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells
001504 (1999-12-01) Strain optimization for high differential gain and low current operation in 1.55 μm InGaAs/InGaAsP quantum well lasers
001B93 (1997) Theoretical optimization of V-shaped GaInAsP quantum-well lasers grown on InP substrates
001E75 (1996) Spin repolarization in bidimensional gas of interacting excitons
002019 (1995-09-15) Theoretical comparison of GaInAs/GaAlInAs and GaInAs/GaInAsP quantum-well lasers
002078 (1995-01-15) Optical gain evaluation in GaInAsP quantum-well lasers: A comparison of the different growth techniques
002169 (1995) Hole spin relaxation in intrinsic quantum wells
002243 (1994-10-15) Exciton formation and hole-spin relaxation in intrinsic quantum wells
002350 (1994) Strained multi-quantum well heterostructures for lasers, modulators and integrated optical devices at 1.3-1.55 μm
002415 (1994) Enhanced exciton blue shift in spin polarized dense exciton system in quantum wells
002551 (1993) Spin relaxation of excitons in strained InGaAs/GaAs quantum wells
002552 (1993) Spin orientation by optical pumping of strained In0.35Ga0.65As/GaAs quantum wells grown on vicinal substrates
002553 (1993) Spin orientation by optical pumping in strained InxGa1-xAs/GaAs quantum wells
002593 (1993) Optical pumping in strained In0.2Ga0.8As/GaAs quantum wells
002626 (1993) Luminescence polarization and hole spin-relaxation in quantum wells
002789 (1992) Well-width dependence of the excitonic lifetime in strained III-V quantum wells
002797 (1992) Theoretical threshold lowering of compressively strained InGaAs/InGaAsP and GaInAsP/GaInAsP quantum-well lasers
002810 (1992) Spin orientation by optical pumping in two GaAs/AlxGa1-xAs quantum wells
002867 (1992) Induced electrostatic confinement of the electron gas in tensile strained InGaAs/InGaAsP quantum well lasers
002977 (1991) Stark effect in GaInAs/GaInAsP quantum-wells

List of associated KwdEn.i

Nombre de
documents
Descripteur
14Gallium arsenides
13Experimental study
13Semiconductor materials
12Indium arsenides
12Photoluminescence
9Quantum wells
8Strained quantum well
7Binary compounds
7Ternary compounds
6Gallium Indium Arsenides Mixed
5Excitons
4Aluminium arsenides
4Band structure
4Gallium Arsenides
4Gallium Indium Arsenides phosphides Mixed
4Inorganic compound
4Theoretical study
4Very low temperature
3Exciton
3Photoconductivity
3Semiconductor lasers
3Spin relaxation
2Chemical composition
2Circular polarization
2Compressive stress
2Depolarization
2Electronic structure
2Gain
2Hamiltonians
2Indium phosphides
2Lifetime
2Luminescence decay
2Optical pumping
2Optical transition
2Picosecond
2Quantum well
2Quaternary compounds
2Semiconductor laser
2Strains
2Time resolution
1Aluminium Gallium Arsenides Mixed
1Auger effect
1Band anticrossing model
1Band offset
1Biexciton
1Binding energy
1Blue shift
1Bound exciton
1Calculations
1Carrier concentration
1Charge carrier recombination
1Comparative evaluations
1Confinement
1Current density
1Deformation
1Deformation potential
1Dilute systems
1Dispersion
1Elasticity theory
1Electric field
1Electron delocalization
1Electron-hole recombination
1Energy-level transitions
1Exchange interactions
1Excitation spectrum
1Exciton-exciton interactions
1Experimental result
1Experiments
1Film growth
1Gallium compounds
1Gallium nitrides
1Gallium phosphide
1Gallium phosphides
1Hanle effect
1Heterostructures
1High strain
1Hole
1III-V compound
1III-V semiconductors
1Indium Gallium Arsenides Mixed
1Indium Phosphides
1Indium compounds
1Indium nitrides
1Indium phosphide
1Infrared radiation
1Interband transitions
1Interfacial layer
1Laser
1Laser beam
1Laser pulse
1Laser radiation
1Line splitting
1Mathematical models
1Microelectronic fabrication
1Microelectronics
1Modulator
1Molecular beam epitaxy
1Multiple quantum well
1Nitrides
1Optical dipole moments

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