Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. B. Rodriguez »
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J. B. Renucci < J. B. Rodriguez < J. B. Sousa  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000136 (2012) Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain
000185 (2011) Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode
000246 (2011) Asymmetric InAs/GaSb superlattice pin photodiode to improve temperature operation
000270 (2010) Sb-based laser sources grown by molecular beam epitaxy on silicon substrates
000325 (2010) Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation
000430 (2009) Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy
000480 (2008) nBn Based Infrared Detectors Using Type-II InAs/(In,Ga)Sb Superlattices
000669 (2007) Interface analysis of InAs/GaSb superlattice grown by MBE
000867 (2005) Uncooled InAs/GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range
000917 (2005) Optical characterization of symmetric InAs/GaSb superlattices for detection in the 3-5 μm spectral region
000935 (2005) MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection

List of associated KwdEn.i

Nombre de
documents
Descripteur
9Molecular beam epitaxy
8Superlattices
6Gallium antimonides
6Indium arsenides
5Binary compounds
5III-V semiconductors
5Indium Arsenides
4Monolayers
4Photoluminescence
4Temperature dependence
3Ambient temperature
3III-V compound
3Infrared detectors
3Interfaces
3Photodetectors
3Superlattice
2Absorption coefficients
2Binary compound
2Crystal growth from vapors
2Current density
2Cut off frequency
2Dark current
2Heterostructures
2Infrared radiation
2Measurement sensor
2Mid infrared radiation
2Performance evaluation
2Photodiodes
2Radiation detectors
2Transmission electron microscopy
2Voltage measurement
11/f noise
1Absorbance
1Absorption coefficient
1Absorption spectra
1Absorption spectrum
1Aluminium antimonides
1Antimony
1Atomic force microscopy
1Averaging method
1Background noise
1Bias voltage
1Cryogenic temperature
1Current measurement
1Detectivity
1Electrical measurement
1Electrical properties
1Electron microscopy
1Electronic properties
1Envelope function
1Epitaxial layers
1Experimental study
1Far infrared radiation
1Field effect transistors
1Focal plane arrays
1Frequency shift
1Gallium arsenides
1Gallium phosphide
1Hall effect
1High speed
1High temperature
1Image resolution
1Implementation
1Indium antimonides
1Infrared detection
1Infrared detector
1Interface properties
1Interface structure
1Miscibility
1Nanostructured materials
1Optimization method
1Optoelectronic device
1Optoelectronic devices
1Photodetector
1Photodiode
1Photovoltaic cell
1Photovoltaic effects
1Quantum cascade laser
1Quantum detector
1Quantum wells
1Quantum yield
1RHEED
1Response function
1Response functions
1Schottky barrier diode
1Semiconductor lasers
1Size effect
1Solid source molecular beam epitaxy
1Spatial resolution
1Spectral response
1Temperature measurement
1Thickness
1Transport processes
1Ultrathin films
1Uncooled detectors
1Voltage current curve
1X ray diffraction
1p type semiconductor

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