I. Saadeddin < I. Sagnes < I. Salesse

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 42.
[0-20] [0 - 20][0 - 42][20-40]

Ident.	Authors (with country if any)	Title
000174 (2011)		Structural analysis of site-controlled InAs/InP quantum dots
000322 (2010)		Engineering of InAsP/InP quantum dot emission for long-distance Quantum communications
000400 (2009)		Single photon sources using InAs/InP quantum dots
000519 (2008)		Photonic crystal nanolasers with controlled spontaneous emission
000526 (2008)		One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots : First step towards single-photon source applications
000590 (2008)		De-relaxation of plastically relaxed InAs/GaAs quantum dots during the growth of a GaAs encapsulation layer
000617 (2007)		Thermodynamic analysis of the shape, anisotropy and formation process of InAs/InP(001) quantum dots and quantum sticks grown by metalorganic vapor phase epitaxy
000635 (2007)		Photonic crystal slab reflectors for compact passive and active optical devices
000708 (2007)		Continuous-wave operation of photonic band-edge laser at 1.55 μm on silicon wafer
000735 (2007)		1.55μm InP-based electrically-pumped VECSELs : comparison of buried and implanted tunnel junctions as current confinement schemes for the realization of large diameter devices
000851 (2006)		Compact Photonic devices based on 1D and 2D photonic crystal broadband reflectors
000939 (2005)		Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate
000A86 (2004)		Room-temperature continuous-wave laser operation of electrically-pumped 1.55 μm VECSEL
000A87 (2004)		Room temperature CW lasing operation of monolithically grown 1.55 μm vertical external cavity surface emitting laser
000A97 (2004)		Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
000A98 (2004)		Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
000B24 (2004)		Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks
000B52 (2004)		Fabrication of ultra-thin InP membranes and their application for high reflective mirrors in tunable vertical-cavity devices
000B81 (2004)		Au/In2 bonding of InP-based MOEMS
000B97 (2004)		2D AlGaAs/AlOx photonic crystal high-Q resonator around 1.5μm
000B98 (2004)		1.55 μm VCSELs with InP/air-gap distributed bragg reflectors

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List of associated KwdEn.i

Nombre de documents	Descripteur
23	Experimental study
20	Gallium arsenides
20	III-V semiconductors
16	Indium arsenides
13	Photoluminescence
12	Binary compounds
11	MOVPE method
11	Quantum dots
11	Semiconductor lasers
8	Mirrors
7	Indium compounds
7	Semiconductor quantum wells
6	Indium phosphides
6	VPE
6	Vertical cavity laser
5	Ambient temperature
5	III-V compound
5	Indium phosphide
5	Quantum well lasers
5	Semiconducting indium phosphide
4	Experiments
4	Low pressure
4	MOCVD
4	Optical pumping
4	Photonic crystals
4	Quaternary compounds
4	Semiconductor growth
4	Ternary compounds
4	Transmission electron microscopy
3	Binary compound
3	Bragg reflection
3	CW lasers
3	Crystal growth from vapors
3	Current density
3	Growth mechanism
3	Infrared laser
3	Laser cavity resonators
3	Laser materials
3	Laser modes
3	Nanomaterial synthesis
3	Nanostructured materials
3	Nanostructures
3	Normal incidence
3	Optical materials
3	Photonics
3	Reflectance
3	Semiconductor quantum dots
3	Spontaneous emission
3	Surface emitting lasers
3	Theory
2	Air gap
2	Aluminium arsenides
2	Aluminium compounds
2	Arrays
2	Bloch wave
2	Cavity
2	Cavity resonator
2	Characterization
2	Chemical beam epitaxy
2	Continuous wave
2	Continuous wave lasers
2	Distributed Bragg reflection
2	Distributed Bragg reflector lasers
2	Encapsulation
2	Hydrogenation
2	Indium Arsenides
2	Indium Phosphides
2	Instrumentation
2	Laser diodes
2	Laser mirrors
2	Light emitting diode
2	Lithography
2	Metallorganic vapor phase epitaxy
2	Microelectronic fabrication
2	Multilayers
2	Non radiative recombination
2	Optical communication
2	Optoelectronic device
2	Organometallic compounds
2	Output power
2	Photonic crystal
2	Quality factor
2	Quantum communication
2	Quantum electrodynamics
2	Refractive index
2	Room temperature
2	Selective area
2	Selective growth
2	Semiconducting aluminum compounds
2	Semiconductor materials
2	Silicon
2	Surface emitting laser
2	Thin films
2	Threshold current
2	Tunable circuit
2	Tunable filter
2	Tunable laser
2	Wafer bonding
2	Wafers
1	Aluminium antimonides

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