Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « H. Thibierge »
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H. Teisseyre < H. Thibierge < H. Thomas  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
001C76 (1997) Evaluation of the properties of hydrogenated InP/InGaAsP double heterostructure waveguides
002000 (1995-11-01) Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser-modulator integration
002074 (1995-02-06) Cation interdiffusion in InGaAsP/InGaAsP multiple quantum wells with constant P/As ratio
002077 (1995-01-23) New encapsulant source for III-V quantum well disordering
002210 (1995) An optical study of interdiffusion in strained InP-based heterostructures
002655 (1993) Highly thermally stable electrical compensation in oxygen implanted p-InAlAs
002A16 (1991) Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys
002A57 (1991) Deep-level photoluminescence emission in heavily Be-doped CBE-grown InP : an explanation of low Be acceptor activity
002B67 (1990) Enhancement of group III atom interdiffusion by nondopant oxygen implants in In0.53Ga0.47As-In0.52Al0.48As multiquantum wells
002F82 (1986) The growth and characterization of device quality InP/Ga1-xInxAsyP1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium

List of associated KwdEn.i

Nombre de
documents
Descripteur
9Experimental study
6Photoluminescence
5Semiconductor materials
4Gallium arsenides
4Indium arsenides
4Inorganic compound
4Quantum wells
3Annealing
3Gallium phosphides
3Indium phosphides
2Aluminium Indium Arsenides Mixed
2Concentration distribution
2Deep level
2Diffusion
2Double heterojunction
2Epitaxy
2Excitons
2Gallium Indium Arsenides phosphides Mixed
2III-V semiconductors
2Indium Phosphides
2Ion implantation
2Spectral line shift
2Temperature
2Thermal annealing
1Aluminium arsenides
1Auger electron spectrometry
1Beryllium
1Binary compound
1Blue shift
1Charge carrier concentration
1Chemical beam condensation
1Chemical composition
1Chemical diffusion
1Chemical vapor deposition
1Compensation
1Crystal growth
1Diffusion coating
1Distributed feedback lasers
1Donor center
1Doped materials
1Electrical conductivity
1Fluence
1Gallium Indium Arsenides Mixed
1Gallium phosphide
1Heterojunction
1Heterojunctions
1Heterostructures
1Hydrogen
1Hydrogenation
1III-V compound
1Indium phosphide
1Infrared radiation
1Integrated optics
1Interdiffusion
1Interface structure
1Manufacturing
1Microelectronic fabrication
1Multiple quantum well
1Optical modulators
1Optoelectronic device
1Order disorder
1Order-disorder transformations
1Organometallic compound
1Oxygen
1Passivation
1Phosphorus additions
1Polaron
1Quaternary compound
1Quaternary compounds
1Rapid thermal annealing
1Semiconductor laser
1Silicon oxides
1Solid solution
1Spectral shift
1Strains
1Thermal instabilities
1Vacancies
1Waveguide

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