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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « H. Sik »
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H. Sigg < H. Sik < H. Soto  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000007 (2013) Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation
000A74 (2004) Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD
001028 (2002) Effect of leakage current induced by B+H+ implantation in the isolation process for self passivated GaAlAs/GaInP/GaAs HBT
001372 (2000) Three-waveguide two-grating codirectional coupler for 1.3-/1.3+/1.5μm demultiplexing in transceiver
001633 (1999) Tunable filter with box-like spectral response for 1.28/1.32 μm duplexer application
001646 (1999) Surface passivation of composition graded base in GaAlAs/GalnP/GaAs heterojunction bipolar transistor
001722 (1999) Hydrogenation of buried passive sections in photonic integrated circuits : a tool to improve propagation losses at ∼ 1.56 μm
001938 (1998) Significant reduction of propagation losses in InGaAsP-InP buried-stripe waveguides by hydrogenation
001953 (1998) Planar selective regrowth of high resistivity semi-insulating InP(Fe) by LP-MOVPE for buried lasers using TBP
001984 (1998) Investigation on base surface recombination in Self Passivated GaAlAs/GalnP/GaAs Heterojunction Bipolar Transistor
002454 (1994) (NH4)2Sx passivation treatment and UVCVD stabilisation for GaInP/GaAs heterojunction bipolar transistors
002549 (1993) Stability of highly Be-doped GaAs/GaInP HBTs grown by chemical beam epitaxy

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Experimental study
3Gallium Arsenides
3Heterojunction transistor
3III-V semiconductors
3Indium Phosphides
3Passivation
3Ternary compound
2Aluminium arsenides
2Binary compound
2Bipolar transistor
2Crystal growth from vapors
2Current gain
2Diffraction gratings
2Experiments
2Fiber optic networks
2Gallium Phosphides
2Gallium arsenides
2Gallium phosphide
2Hydrogenation
2III-V compound
2Indium phosphide
2Indium phosphides
2MESA technology
2Microelectronic fabrication
2Semiconducting indium phosphide
1Acceptor center
1Aluminium Arsenides
1Application
1Aqueous solutions
1Atomic force microscopy
1Binary compounds
1Bipolar technology
1Buried laser
1Buried layer
1CVD
1Characterization
1Charge carriers
1Chemical stabilization
1Chemical vapor deposition
1Codirectional coupler
1Comparative study
1Composition effect
1Current density
1Degradation
1Dielectric coating
1Doping
1Electromagnetic wave polarization
1Energy gap
1Etching
1Gain
1Gallium Arsenides phosphides
1Gallium Indium Phosphides Mixed
1Gallium phosphides
1Heterojunction bipolar transistors
1High frequency transistor
1Ideality
1Indium Arsenides phosphides
1Indium antimonides
1Inorganic compounds
1Integrated optics
1Integrated optoelectronics
1Ion implantation
1Laser diodes
1Leakage current
1Light transmission
1Low pressure
1MOCVD
1MOVPE method
1Masking
1Monocrystals
1Monolithic integrated circuit
1Multiplexer demultiplexer
1Multiplexing equipment
1Nanostructured materials
1Nanowires
1Operating mode
1Optical access network
1Optical filters
1Optical line terminal
1Optical losses
1Optical network unit
1Optical properties
1Optical waveguides
1Overlayers
1Passive component
1Passive networks
1Photodetectors
1Photoluminescence
1Photonics
1Planar technology
1Polysulfides
1Precursor
1Recombination
1Reliability
1Reviews
1Scanning electron microscopy
1Selective growth
1Semiconducting indium compounds
1Semiconductor device
1Semiconductor heterojunctions

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