Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « H. P. D. Schenk »
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H. Ouslimani < H. P. D. Schenk < H. P. Mayer  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
000109 (2012) Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters
000309 (2010) In-clustering effects in InAlN and InGaN revealed by high pressure studies
000E94 (2002) Vertical cavity InGaN LEDs grown by MOVPE
001176 (2001) Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers
001326 (2000-08-01) Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck-Shockley relation
001522 (1999-10-25) Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN

List of associated KwdEn.i

Nombre de
documents
Descripteur
3Experimental study
3Indium compounds
3MOVPE method
3Photoluminescence
3VPE
2Energy gap
2Gallium compounds
2Growth mechanism
2III-V semiconductors
2Indium nitride
2MOCVD coatings
2Semiconductor epitaxial layers
2Semiconductor growth
2Semiconductor materials
2Thin films
2Wide band gap semiconductors
1Absorption coefficients
1Absorption spectra
1Aluminium Indium Nitrides Mixed
1Band structure
1Binary compound
1Bowing parameter
1Carrier density
1Cavity resonator
1Crystal morphology
1Distributed Bragg reflection
1Doped materials
1Edge dislocations
1Gallium nitride
1Gallium nitrides
1Hexagonal lattices
1High pressure
1Hydrostatic pressure
1III-V compound
1In situ
1Indium Gallium Nitrides Mixed
1Indium nitrides
1Lattice relaxation
1Layer thickness
1Light emitting diode
1MOCVD
1Manufacturing process
1Microcavity
1Multiple quantum well
1Operating conditions
1Performance evaluation
1Power law
1Reflectometry
1Silicon additions
1Temperature dependence
1Ternary compound
1Ternary compounds
1Threading dislocation

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