Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « H. Mathieu »
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H. Martinot < H. Mathieu < H. Mazille  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
001114 (2001-03-12) Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
001115 (2001-02-26) High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
001187 (2001) Optical properties of self-assembled InGaN/GaN quantum dots
001674 (1999) Recombination dynamics of excitons in III-nitride layers and quantum wells
002084 (1995-01) Modification des propriétés optiques des structures doubles puits quantiques GaAs-(Ga,In)As sous l'effet d'un champ électrique
002820 (1992) Photoreflectance and piezophotoreflectance studies of strained-layer InxGa1-xAs-GaAs quantum wells
002E54 (1987) Exciton et polariton dans les semiconducteurs cubiques: étude de la réflectivité
002F09 (1987) Localization behavior of donor-related complexes in InP under hydrostatic pressure
002F25 (1987) Exciton-polaritons in InP: magnetoreflectance investigation
002F80 (1986) Theoretical investigation of the magnetodonors in a narrow gap semi-conductor under high pressure conditions

List of associated KwdEn.i

Nombre de
documents
Descripteur
8Experimental study
7Semiconductor materials
5Inorganic compound
5Photoluminescence
4Theoretical study
3Binary compounds
3Exciton
3III-V semiconductors
3Indium Phosphides
3Ternary compounds
3Time resolved spectra
2Donor center
2Envelope function
2Excitons
2Gallium compounds
2Gallium nitrides
2Hydrostatic pressure
2Indium compounds
2Indium nitrides
2Magnetic field
2Magnetooptical reflection
2Multiple quantum well
2Optical reflection
2Radiative recombination
2Semiconductor quantum wells
2Uniaxial stress
2Valence band
2Wide band gap semiconductors
1Aluminium compounds
1Band offset
1Band splitting
1Band structure
1Bound state
1Carrier mobility
1Chemical composition
1Complex defect
1Confinement
1Coulomb field
1Cubic crystals
1Electric field effects
1Electric fields
1Electron interaction
1Electron-hole recombination
1Electronic transition
1Fine structure
1G factor
1Gallium Arsenides
1Gallium Indium Arsenides Mixed
1Gallium arsenides
1Growth mechanism
1High pressure
1Impurity level
1Indium Antimonides
1Indium arsenides
1Interface states
1Island structure
1Iterative methods
1Landau level
1Luminescence decay
1Modulation
1Molecular beam epitaxy
1Non radiative recombination
1Optical properties
1Optical transition
1Parameter
1Piezooptical effect
1Polariton
1Pressure
1Quantum dots
1Quantum wells
1Reflectivity
1Resonance state
1Rydberg state
1Self consistency
1Self-assembled layers
1Semiconductor quantum dots
1Size effect
1Spectral shift
1Strained quantum well
1Stresses
1Temperature dependence
1Thickness
1Thin films
1Transfer matrix
1Trapping
1Two dimensional model
1Variational calculus
1Very low temperature
1Visible reflection
1Zeeman effect

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "H. Mathieu" 
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "H. Mathieu" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

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