H. M. Veit < H. Maaref < H. Maher

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 29.
[0-20] [0 - 20][0 - 29][20-28][20-40]

Ident.	Authors (with country if any)	Title
000060 (2013)		Excitonic properties of wurtzite InP nanowires grown on silicon substrate
000221 (2011)		Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (3 1 1)A GaAs substrates
000238 (2011)		Coulomb charging effect of electrons in InAs/InAlAs quantum dots studied by capacitance techniques
000268 (2010)		Structural and optical study of BxInyGa1-x-yAs/GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD
000330 (2010)		Electrical properties of self-assembled InAs/InAlAs quantum dots on InP
000450 (2009)		Growth study of thin indium nitride layers on InP (10 0) by Auger electron spectroscopy and photoluminescence
000702 (2007)		Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers
000819 (2006)		Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(001)
000914 (2005)		Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer
000975 (2005)		Evidence of lateral coupling in long wavelength vertically stacked InAs/GaAs(001) quantum dots
000A59 (2004)		Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission
000B89 (2004)		Alloy broadening effect on optical properties of InGaAs grown by MOCVD with TMAs precursor
000D00 (2003)		Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices
000D07 (2003)		Radiative recombination lifetime of excitons in self-organized InAs/GaAs quantum dots
000F55 (2002)		Optical anisotropy and photoluminescence temperature dependence for self-assembled InAs quantum islands grown on vicinal (001) InP substrates
001058 (2001-12-24)		Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates
001285 (2001)		A novel selectively 6-doped AlGaAs/(In, Ga, As)/GaAs pseudomorphic heterostructure
001383 (2000)		Structural and electronic properties of poly(meta/para phenylene)
001414 (2000)		Optical study of inverted interface in InP/InAlAs/InP structures grown by MOCVD
001546 (1999-08-01)		Theoretical and experimental studies in n-type modulation-doped InxGa1-xAs/InyAl1-yAs/InP magnetic sensors
001667 (1999)		Self-organized growth, ripening, and optical properties of uncapped InP/GaP (100) islands

---

List of associated KwdEn.i

Nombre de documents	Descripteur
20	Photoluminescence
13	Indium arsenides
12	Experimental study
11	Gallium arsenides
10	III-V semiconductors
9	Molecular beam epitaxy
9	Quantum dots
8	Optical properties
6	Binary compounds
6	Indium Phosphides
5	Atomic force microscopy
5	Excitons
5	Semiconductor materials
4	Activation energy
4	Aluminium arsenides
4	DLTS
4	Experimental result
4	Fermi level
4	III-V compound
4	Indium phosphides
4	Island structure
4	Self-assembled layers
4	Temperature dependence
3	Charge carrier trapping
3	Defect states
3	Growth mechanism
3	Indium compounds
3	Low temperature
3	MOVPE method
3	Self organization
3	Temperature effects
3	Time resolved spectra
2	Aluminium Indium Arsenides Mixed
2	Binary compound
2	CV characteristic
2	Carrier density
2	Deep level
2	Electronic structure
2	Epitaxial layers
2	Epitaxy
2	Excitation spectrum
2	Gallium Indium Arsenides Mixed
2	Gallium Phosphides
2	Indium phosphide
2	Inorganic compound
2	Interface electron state
2	Localized states
2	MOCVD
2	Microelectronic fabrication
2	Mismatch lattice
2	Quantum wells
2	Temperature
2	Ternary compounds
2	Theoretical study
2	Thickness
2	Thin films
2	Transmission electron microscopy
2	Two-dimensional electron gas
2	Valence bands
2	Voltage current curve
2	Waveform
2	XRD
1	AES
1	Aluminium
1	Aluminium Gallium Arsenides Mixed
1	Aluminium compounds
1	Analysis method
1	Anisotropy
1	Aromatic polymer
1	Arsine
1	Band structure
1	Barrier height
1	Blende structure
1	Boron
1	Boron additions
1	CVD coatings
1	Capacitance
1	Charge carrier generation
1	Charge carrier recombination
1	Charge transfer
1	Chemical composition
1	Cleavage
1	Composition effect
1	Concentration distribution
1	Conjugated polymer
1	Continuous wave
1	Coulomb interaction
1	Coupling
1	Crystal defects
1	Crystal field splitting
1	Crystal growth
1	Crystal orientation
1	Crystallinity
1	Deep energy levels
1	Defect density
1	Defect level
1	Depth profiles
1	Digital simulation
1	Diode
1	Dislocation density

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "H. Maaref" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "H. Maaref" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    H. Maaref
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024