H. Kurz < H. L Haridon < H. L Helgoualch

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 24.
[0-20] [0 - 20][0 - 24][20-23][20-40]

Ident.	Authors (with country if any)	Title
001697 (1999)		Multiple quantum well optically addressed spatial light modulators operating at 1.55 μm with high diffraction efficiency and high sensitivity
001918 (1998)		The effect of the growth procedure and the InAs amount on the formation of strain-induced islands in the InAs/InP(001) system
001998 (1998)		High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5-1.6 μm
001D21 (1997)		photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity
001D87 (1996-06-17)		Photorefractive p-i-n diode quantum well operating at 1.55 μm
001E72 (1996)		Structural aspects of the growth of InAs islands on InP substrate
002018 (1995-09-25)		Relationship between self-organization and size of InAs islands on InP(001) grown by gas-source molecular beam epitaxy
002123 (1995)		Simulation and photoluminescence characterization of transverse electric-transverse magnetic emission of strained Ga0.47In0.53As/Ga062In038As superlattices
002562 (1993)		Scanning photoluminescence characterization of iron-doped gas source molecular beam epitaxy indium phosphide layers
002978 (1991)		Spatial investigation of an iron-doped indium phosphide ingot
002A14 (1991)		Inhomogeneity in a semi-insulating indium phosphide ingot
002B08 (1990)		Spatial distribution of donors in silicon implanted iron and iron-gallium doped semi-insulating indium phosphide
002B90 (1990)		Assessment of Fe-doped semi-insulating InP crystals by scanning photoluminescence measurements
002B93 (1990)		Angle resolved X-ray photoemission study of rapid thermal annealing applied to different GaAs and InP samples
002C17 (1989)		Dopage béryllium de couches InGaAs élaborées par épitaxie jet moléculaire: étude de la compensation
002C48 (1989)		Oxygen complexes in III-V compounds as determined by secondary-ion mass spectrometry under cesium bombardment
002D47 (1988)		Schottky and field-effect transistor fabrication on InP and GalnAs
002E07 (1988)		Erbium implanted in III-V materials
002E26 (1988)		Behaviour of erbium implanted in InP
002E90 (1987)		Residual defect center in GaInAs/InP films grown by molecular beam epitaxy
002F01 (1987)		Nondiffusion and 1•54 μm luminescence of erbium implanted in InP

---

List of associated KwdEn.i

Nombre de documents	Descripteur
15	Experimental study
9	Photoluminescence
9	Semiconductor materials
8	Indium Phosphides
8	Inorganic compound
7	Impurity
6	Gallium Indium Arsenides Mixed
6	Indium arsenides
5	Crystal growth
5	Indium phosphides
4	Ion implantation
4	Secondary ion mass spectrometry
3	Beryllium
3	Epitaxy
3	Erbium
3	Gallium Arsenides
3	Gallium arsenides
3	III-V compound
3	Iron
3	Quantum dots
3	Temperature
3	Ternary compounds
2	Concentration distribution
2	Deep level transient spectrometry
2	Diffraction efficiency
2	Donor center
2	Doping
2	Epitaxial film
2	Gallium phosphides
2	Molecular beam condensation
2	Molecular beam epitaxy
2	Multiple quantum well
2	Optical properties
2	Oxygen
2	Quaternary compounds
2	TEM
2	Thin film
1	Acceptor center
1	Aluminium Gallium Arsenides Mixed
1	Amorphization
1	Angle
1	Annealing
1	Band structure
1	Barrier height
1	Binary compounds
1	Characterization
1	Charge carrier concentration
1	Charge carrier mobility
1	Compensation
1	Compounded structure
1	Concentration effect
1	Contamination
1	Czochralski method
1	Defect level
1	Diffraction gratings
1	Dislocation
1	Elastic relaxation mechanism
1	Elasticity
1	Electric resistivity
1	Electrical properties
1	Electromagnetic wave diffraction
1	Electron transitions
1	Energy gap
1	Experiments
1	Extended defect
1	Fabrication structure relation
1	Field effect transistor
1	Four-wave mixing
1	GSMBE method
1	Gallium Indium Arsenides phosphides Mixed
1	Gold
1	Hall effect
1	Heat treatment
1	Heteroepitaxy
1	Heterogeneity
1	Heterostructures
1	High temperature
1	Impurity diffusion
1	Impurity level
1	Indium arsenide
1	Infrared radiation
1	Inversion layer
1	Island density
1	Island spatial distribution
1	Island structure
1	Junction
1	Laser
1	Light emitting device
1	Low temperature
1	Magnesium
1	Mathematical models
1	Measurement
1	Mercury
1	Metal semiconductor field effect transistor
1	Microcavity
1	Molecular beam
1	Monolayers
1	N type conductivity
1	Nanostructures
1	Nonlinear optics

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "H. L Haridon" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "H. L Haridon" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    H. L Haridon
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024