Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « H. Folliot »
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H. Foehrenbach < H. Folliot < H. Foure  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000274 (2010) QD laser on InP substrate for 1.55 μm emission and beyond
000465 (2009) Design of an InGaAs/InP 1.55 μm electrically pumped VCSEL
000487 (2008) Theoretical study of highly strained InAs material from first-principles modelling : application to an ideal QD
000740 (2006) Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement
000844 (2006) Design and fabrication of GaInAsP/InP VCSEL with two a-Si/a-SiNx Bragg reflectors
000857 (2006) Approach to wetting-layer-assisted lateral coupling of InAs/InP quantum dots
000887 (2005) Structural and electronic properties of BAs and B========exist;Ga1-xAs, BxIn1-xAs alloys
000A08 (2005) Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection
000C52 (2003-03-17) Ultrashort, nonlinear, optical time response of Fe-doped InGaAs/InP multiple quantum wells in 1.55-μm range
000D61 (2003) Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser
000D65 (2003) Formation of InAs islands on InP(3 11)B surface by molecular beam epitaxy
000F50 (2002) Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission
001013 (2002) Formation of 3D InAs quantum dots on InP substrate
001820 (1998-10-15) Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP

List of associated KwdEn.i

Nombre de
documents
Descripteur
9III-V semiconductors
9Indium arsenides
7Quantum dots
6Binary compounds
6Experimental study
5Indium phosphides
5Semiconductor lasers
4Gallium arsenides
4Optical pumping
4Photoluminescence
4Quantum dot lasers
3Atomic force microscopy
3Crystal growth from vapors
3Electronic structure
3Mismatch lattice
3Molecular beam epitaxy
3Nanostructures
3Semiconductor materials
3Threshold current
2Ambient temperature
2Bragg reflection
2Density functional method
2Distributed Bragg reflection
2Energy gap
2GSMBE method
2Gallium phosphides
2Growth mechanism
2Heterojunctions
2Indium Arsenides
2Indium Phosphides
2Indium compounds
2Inorganic compounds
2Optical properties
2Optoelectronic devices
2Quantum wells
2Quaternary compounds
2Surface emitting lasers
2Time resolved spectra
2Vertical cavity laser
1Ab initio calculations
1Acoustical phonons
1Amorphous semiconductors
1Band splitting
1Band structure
1Biaxial strain
1Blende structure
1CVD
1Charge carrier injection
1Chemical beam epitaxy
1Continuous wave
1Crystal orientation
1Current density
1Density
1Dielectric materials
1Doping
1Double layers
1Elastic constants
1Elastic deformation
1Electric fields
1Electronic density of states
1Emission spectra
1Empirical model
1Excited states
1Excitons
1Field distribution
1Fourier transformation
1Gallium Arsenides
1Ground states
1Indium phosphide
1Infrared laser
1Infrared spectra
1Interface structure
1Iron
1Island structure
1Lattice parameters
1MOCVD
1Measuring methods
1Miniband
1Modelling
1Nanostructured materials
1Nanotechnology
1Non linear effect
1Operating mode
1Optical constants
1Optical memory
1Optical method
1Optical phonons
1Optical saturable absorption
1Optical spectrometry
1Optical switches
1Phase transformations
1Phonon mode
1Process control
1Quantum detector
1Quantum well lasers
1Quantum wires
1Reflectivity
1Refractive index
1Roughness
1S matrix

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