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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « H. Dumont »
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H. Dubois < H. Dumont < H. Duroy  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000127 (2012) Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon
000B33 (2004) Interplay between strain and confinement effects on optical and structural properties in InGaAs/GaAs epilayers and quantum wells
000B54 (2004) Enhancement of atomic ordering in In0.53Ga0.47As/InP: a comparison between trimethylarsenic and arsine
000B89 (2004) Alloy broadening effect on optical properties of InGaAs grown by MOCVD with TMAs precursor
000C87 (2003) Surface and self-organisation of III-V thin films for optoelectronics: Influence of surface orientation and strain on growth mechanisms
000D18 (2003) Optical signature of atomic ordering in In0.53Ga0.47As/InP: photoluminescence properties and IR response
001455 (2000) Energy barrier for the growth transition step-flow/step-bunching during epitaxy of InP/InP
001571 (1999-05-15) Strain-induced surface morphology of slightly mismatched InxGa1-xAs films grown on vicinal (100) InP substrates
001647 (1999) Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine
001648 (1999) Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates
001729 (1999) Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine
001D06 (1997) Behaviour of vicinal InP surfaces grown by MOVPE : exploitation of AFM images

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Atomic force microscopy
8Experimental study
8Gallium arsenides
8Indium arsenides
8MOVPE method
7Indium phosphides
7Semiconductor materials
6Photoluminescence
6Ternary compounds
5Epitaxial layers
5Growth mechanism
4Binary compounds
4Crystal growth from vapors
4III-V semiconductors
4Morphology
3Surface structure
3Thin films
3Vicinal surface
2Arsine
2Dislocations
2Mismatch lattice
2Optical properties
2Precursor
2Semiconductor epitaxial layers
2Substrates
2Surface morphology
2Surfaces
2VPE
1Adsorption
1Alloying effects
1Analysis method
1Anisotropy
1Annealing
1Buffer layer
1Catalysts
1Crystal orientation
1Crystal structure
1Cubic lattices
1Dewetting
1Electron diffraction
1Electron mobility
1Epitaxy
1Experimental result
1Faceting
1Gold
1Hall effect
1Heterojunctions
1III-V compound
1Indium
1Indium compounds
1Indium phosphide
1Infrared spectra
1Line width
1Line widths
1Low temperature
1Luminescence spectrum
1MOCVD
1Material composition
1Microstructure
1Modeling
1Molecular beam epitaxy
1Nanomaterial synthesis
1Nanostructured materials
1Nanostructures
1Nanowires
1Operating mode
1Optical materials
1Organic arsine
1Perovskites
1Properties of materials
1Quantitative analysis
1Quantum wells
1Raman spectra
1Roughness
1Self organization
1Semiconductor growth
1Stacking faults
1Step bunching
1Stress analysis
1Stress relaxation
1Structural analysis
1Surface diffusion
1Surface topography
1Temperature dependence
1Ternary alloy
1Tertiary arsine
1Thin film
1Transmission electron microscopy
1VLS growth
1Waveform
1Wurtzite structure

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