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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « H. Carrere »
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H. Carchano < H. Carrere < H. Chaabane  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000212 (2011) Hot carrier relaxation process in InGaN epilayers : Novel Gain Materials Based on III-V-N Compounds
000394 (2009) Strained InGaAsP multi-quantum-well structures for InP-based wide linewidth and polarization-insensitive semiconductor optical amplifiers
000A42 (2004-03-15) Electron-acoustic phonon interaction in a single quantum dots layer: Acoustic mirror and cavity effects
000B79 (2004) Band structure calculations for dilute nitride quantum wells under compressive or tensile strain
000C54 (2003-03-01) In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells
000D14 (2003) Photo-induced transient spectroscopy of defect levels in GaInNAs
000D23 (2003) Nitrogen plasma investigations for GaInAsN MBE growth
000D90 (2003) Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties
000E01 (2003) Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells
000F36 (2002) RF plasma investigations for plasma-assisted MBE growth of (Ga, In)(As, N) materials
001218 (2001) Interaction strength between the highly localised nitrogen states and the extended semiconductor matrix states in GaInNAs
001338 (2000-04-15) Acoustic-phonon Raman scattering in InAs/InP self-assembled quantum dots
001435 (2000) InAs/InAs(P,Sb) quantum-well laser structure for the midwavelength infrared region

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
6Gallium arsenides
6Photoluminescence
5III-V semiconductors
5Indium arsenides
4Molecular beam epitaxy
3Band structure
3Indium compounds
3Semiconductor quantum wells
2Crystal growth from vapors
2Electron-phonon interactions
2Energy gap
2Experiments
2Gallium nitrides
2Hamiltonians
2High-frequency discharges
2Indium nitrides
2Nitrides
2Optical properties
2Photoconductivity
2Plasma sources
2Quantum wells
2Raman spectra
2Semiconducting indium compounds
2Semiconductor materials
2Semiconductor quantum dots
2Strained quantum well
2Ternary compounds
2Theory
2Thin films
2Time resolved spectra
1Acoustic materials
1Acoustic wave velocity
1Acoustic waves
1Activation energy
1Active layer
1Application
1Band anticrossing model
1Binary compound
1Binary compounds
1Bose Einstein distribution
1Calculations
1Carrier concentration
1Charge carrier density
1Charge carrier recombination
1Cladding (coating)
1Composition effects
1Compressive stress
1Confinement
1Contamination
1Crystal defects
1Crystal orientation
1Deep level
1Defect states
1Dilute nitrides
1Dilute systems
1Dispersion relation
1Doping
1Effective mass
1Electroluminescence
1Emission spectroscopy
1Epitaxial layers
1Fermi level
1Gain
1Gallium Arsenides nitrides
1Gallium Indium Nitrides Mixed
1Gallium compounds
1Gallium phosphide
1Hamiltonian
1High strain
1Hot carriers
1Impurity density
1Indium Arsenides nitrides
1Indium phosphide
1Infrared radiation
1Integrated intensity
1Intensity modulation
1Interband transition
1Interband transitions
1Interface states
1Ion beams
1Level anticrossing
1Light emission
1Line width
1Localized states
1Luminescence decay
1Mathematical models
1Metal-organic vapor phase deposition
1Metallorganic chemical vapor deposition
1Midwavelength infrared regions
1Monochromators
1Multiple quantum well
1Nitrogen
1Nitrogen additions
1Optical dipole moments
1Optical gain
1Optical spectrometry
1Optical transition
1Optical waveguides
1Oscillator strength

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