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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « H. Bouchriha »
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H. Bouchat < H. Bouchriha < H. Boulahdour  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000402 (2009) Self-assembled monolayer effect on the characteristics of organic diodes
000475 (2009) A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation
000561 (2008) InAsN/GaSb/InAsN 'W' quantum well laser for mid-infrared emission : from electronic structure to threshold current density calculations
000761 (2006) Study of the transient EL slow rise in single layer OLEDs
000C10 (2003-11-01) Band structures of GaAs, InAs, and Ge: A 24-k.p model
000E31 (2002-10-15) Band structures of Ge and InAs: A 20 k.p model
001028 (2002) Effect of leakage current induced by B+H+ implantation in the isolation process for self passivated GaAlAs/GaInP/GaAs HBT
001405 (2000) Photoluminescence and electroluminescence investigations in PEPPV and its derivatives
001B72 (1997) Effet de la température de fabrication sur les propriétés structurales et morphologiques des couches épaisses de In2S3 "spray"

List of associated KwdEn.i

Nombre de
documents		Descripteur
3Band structure
3Binary compounds
3Experimental study
3Theoretical study
2Ambient temperature
2Current density
2Electroluminescence
2Electronic structure
2Elemental semiconductors
2Gallium arsenides
2Germanium
2III-V semiconductors
2Indium Arsenides
2Indium compounds
2Laser diodes
2Light emitting diode
2Nitrides
2Phenylenevinylene derivative polymer
2Semiconductor lasers
2Threshold current
2Voltage current curve
2k.p calculations
1Aluminium arsenides
1Aqueous solutions
1Atomic force microscopy
1Auger recombination
1Charge carrier density
1Charge carrier mobility
1Conjugated polymer
1Continuity equation
1Crystal growth from solutions
1Crystal structure
1Crystallinity
1Diode
1Dispersion relations
1Effective mass
1End group
1Ether polymer
1Fabrication structure relation
1Functional group
1Gain
1Gallium phosphide
1Heterojunction bipolar transistors
1Hole density
1Hole traps
1ITO layers
1Ideality
1Indium oxide
1Indium phosphide
1Indium sulfides
1Infrared laser
1Ion implantation
1Laser materials
1Leakage current
1Luminescent material
1MESA technology
1Majority carrier
1Morphology
1Multiple quantum well
1Nitrogen
1Numerical method
1Oligomer
1Optical gain
1Optical losses
1Optical materials
1Optical properties
1Optoelectronic device
1Organic light emitting diodes
1Photoluminescence
1Quantum well lasers
1Quantum wells
1Radiative recombination
1SEM
1Space charge limited conduction
1Spray coating
1Substrates
1Surface energy
1Surfaces
1TE mode
1TM mode
1Telechelic polymer
1Temperature dependence
1Ternary compound
1Thick film
1Thiol
1Thiophene polymer
1Tin addition
1Transition elements
1Trimer
1Unsaturated polymer
1Use
1XRD

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