Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « H. Blanck »
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H. Bissessur < H. Blanck < H. Bock  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000272 (2010) Reliability of high voltage/high power L/S-band Hbt technology
001C97 (1997) Collector-up InGaP/GaAs-double heterojunction bipolar transistors with high fmax
001D02 (1997) Boron implantation into GaAs/Ga0.5In0.5P heterostructures
002121 (1995) Small-signal and noise model extraction technique for heterojunction bipolar transistor at microwave frequencies
002335 (1994) Le transistor bipolaire à hétérojonction GaInP/GaAs. Technologie et performances hyperfréquences
002391 (1994) LP-MOCVD grown GaInP/GaAs HBTs for VCOs and power amplifier MMICs
002405 (1994) GaInP-GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposiion for voltage-controlled oscilators and power amplifier microwave monolithic integrated circuits
002709 (1993) Defects in epitaxial Si-doped GaInP
002725 (1993) Chemical beam epitaxy of Ga0.5In0.5P using tertiarybutylphosphine
002737 (1993) Band offset of GaAs-GaInP heterojunctions
002851 (1992) Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor
002A30 (1991) First microwave characterization of LP-MOCVD grown GaInP/GaAs self-aligned HBT

List of associated KwdEn.i

Nombre de
documents
Descripteur
6Heterojunction transistor
5Experimental study
4Gallium Arsenides
3Epitaxy
3Gallium Indium Phosphides Mixed
3Gallium arsenides
3Gallium phosphides
3Indium phosphides
3Semiconductor materials
3Ternary compound
3Ternary compounds
3Transistor
2Binary compound
2Binary compounds
2Bipolar transistor
2CV characteristic
2Characterization
2Charge carriers
2Current gain
2Gallium phosphide
2Heterojunction bipolar transistors
2III-V compound
2IV characteristic
2Indium phosphide
2Ion implantation
2Microelectronic fabrication
2Microwave transistor
2Semiconductor device
2Temperature dependence
2X ray diffraction
11/f noise
1Activation energy
1Annealing
1Band offset
1Base emitter junction
1Boron
1Boron additions
1Boron implantation
1Carrier density
1Charge carrier recombination
1Chemical beam condensation
1Chemical vapor deposition
1Concentration distribution
1Conduction bands
1Congress
1Cross sections
1DLTS
1Damaging
1Defect states
1Dislocation
1Donors
1Doped materials
1Durability
1Electric breakdown of solids
1Electric conductivity
1Electric field effects
1Electrical properties
1Electron injection
1Energy gap
1Epitaxial film
1Equivalent circuit
1Failure analysis
1Frequency response
1Gallium Indium Phosphorus Mixed
1Gallium Phosphides
1Growth from vapor
1Growth mechanism
1Heterojunction
1Heterojunctions
1Heterostructures
1High voltage
1Indium Phosphides
1Ionization potential
1L band
1Leakage current
1Long term test
1Low pressure
1Manufacturing process
1Microelectronics
1Microwave device
1Microwave oscillator
1Mismatch lattice
1Monolithic integrated circuit
1Multiple layer
1Noise spectrum
1Organometallic compound
1Parameter extraction
1Performance
1Performance characteristic
1Photoconductivity
1Photoluminescence
1Power amplifier
1Power gain
1Power transistor
1Reviews
1Robustness
1S band
1SIMS
1Secondary ion mass spectrometry
1Semiconducting gallium arsenide

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