IndiumV3, France, Analysis, indexItem, Author.i, G. Post

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.

Ident.	Authors (with country if any)	Title
000A74 (2004)		Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD
001032 (2002)		DC-92 GHz ultra-broadband high gain InP HEMT amplifier with 410 GHz gain-bandwidth product
001050 (2002)		A high gain-bandwidth product InP HEMT distributed amplifier with 92 GHz cut-off frequency for 40 Gbit/s applications and beyond
001224 (2001)		Inductively coupled plasma -- plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)
001411 (2000)		Output conductance dispersion and drain current transients in InP-HFETs: Observations and equivalent circuit model
001634 (1999)		Triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications
001969 (1998)		New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFET's
001A19 (1998)		Doping optimizations for InGaAs/InP composite channel HEMTs
001B67 (1997)		HEMT à canal composite GaInAs/InP pour circuits de modulation optique
001B83 (1997)		Uniform InAlAs/InP HFET fabricated using selective dry recess etching
001B86 (1997)		UV-deposited silicon nitride coupled with XeF2 surface cleaning for III-V optoelectronic device passivation
001C93 (1997)		Controlled steam oxidation of AlInAs for microelectronics and optoelectronics applications
001E49 (1996)		Les transistors à effet de champ à hétérostructure sur InP
001F10 (1996)		Low excess noise of InAlAs/InP HFETs fabricated using selective dry recess etching
002045 (1995-06-15)		Acoustical and optical properties of Ga0.52In0.48P: A Brillouin scattering study
002370 (1994)		Optical characterization of chemical beam epitaxy grown Ga0.52In0.48P layers and related microstructures
002526 (1993)		UVCVD dielectric films for InP-based optoelectronic devices
002823 (1992)		Passivation of InP using In(PO3)3-condensed phosphates : from oxide growth properties to metal-insulator-semiconductor field-effect-transistor devices
002A78 (1990)		Silice UVCVD pour transistors MISFET autoalignés sur InP

List of associated KwdEn.i

Nombre de documents	Descripteur
7	Indium Phosphides
5	Experimental study
5	Field effect transistor
5	III-V compound
5	Microelectronic fabrication
5	Semiconducting indium phosphide
4	Binary compound
4	High electron mobility transistor
4	Ternary compound
3	Ellipsometry
3	Experiments
3	Field effect transistors
3	Gallium phosphides
3	Heterojunction transistor
3	Indium Arsenides
3	Indium phosphide
3	Indium phosphides
3	Passivation
3	Scanning electron microscopy
3	Theory
2	Brillouin effect
2	Chemical vapor deposition
2	Electric breakdown
2	Epitaxial layers
2	Gallium Arsenides
2	Heterojunctions
2	High electron mobility transistors
2	Integrated circuit
2	Ionization of solids
2	MIS structure
2	Optoelectronic device
2	Reactive ion etching
2	Refractive index
2	Semiconductor device manufacture
2	Semiconductor materials
2	Silicon Nitrides
2	Ternary compounds
2	Thin film
2	Transmission electron microscopy
1	Absorption
1	Acoustic properties
1	Aluminium Arsenides
1	Aluminium arsenides
1	Annealing
1	Application
1	Avalanche diode
1	Bandwidth
1	Breakdown voltage
1	Broadband amplifiers
1	CVD
1	Carrier mobility
1	Characterization
1	Circuit design
1	Cleaning
1	Composite canal
1	Composite material
1	Computer simulation
1	Coplanar line
1	Crystal growth from vapors
1	Crystalline structure
1	Cut off frequency
1	Cutoff frequency
1	Data communication systems
1	Delta doping
1	Density of states
1	Deposition
1	Dielectric function
1	Dielectric materials
1	Diode
1	Distributed amplifier
1	Distributed amplifiers
1	Drain noise spectral density
1	Drain resistance
1	Driver
1	Dry etching
1	Dry recess etching
1	Dynamic characteristic
1	Elastic constants
1	Electric breakdown of solids
1	Electric current measurement
1	Electric currents
1	Electric resistance
1	Electroabsorption modulator
1	Electron transport properties
1	Electronic properties
1	Engraving
1	Epitaxy
1	Equivalent circuits
1	Eye diagram
1	Frequencies
1	Gain
1	Gates (transistor)
1	Hall mobility
1	Heterojunction
1	High breakdown voltage transistors
1	High voltage
1	Hole traps
1	III-V semiconductors
1	Impact ionization
1	Impedance

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "G. Post"

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "G. Post" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    G. Post
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium - Analysis (France) Index « Auteurs » - entrée « G. Post »
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium - Analysis (France)Index « Auteurs » - entrée « G. Post »

List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « G. Post »