G. Paris < G. Patriarche < G. Pennelli

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 75.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000012 (2013)		Towards a monolithically integrated III-V laser on silicon: optimization of multi-quantum well growth on InP on Si
000025 (2013)		Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
000060 (2013)		Excitonic properties of wurtzite InP nanowires grown on silicon substrate
000116 (2012)		Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials : Indium Nitride and Related Alloys
000120 (2012)		InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
000127 (2012)		Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon
000172 (2011)		Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
000174 (2011)		Structural analysis of site-controlled InAs/InP quantum dots
000236 (2011)		Direct epitaxial growth of InP based heterostructures on SrTiO3/Si(0 0 1) crystalline templates
000400 (2009)		Single photon sources using InAs/InP quantum dots
000434 (2009)		Influence of the surface reconstruction on the growth of InP on SrTiO3(0 01)
000513 (2008)		RECENT DEVELOPMENTS OF InP-BASED QUANTUM DASHES FOR DIRECTLY MODULATED LASERS AND SEMICONDUCTOR OPTICAL AMPLIFIERS
000519 (2008)		Photonic crystal nanolasers with controlled spontaneous emission
000526 (2008)		One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots : First step towards single-photon source applications
000537 (2008)		Nanoindentation response of a thin InP membrane
000590 (2008)		De-relaxation of plastically relaxed InAs/GaAs quantum dots during the growth of a GaAs encapsulation layer
000617 (2007)		Thermodynamic analysis of the shape, anisotropy and formation process of InAs/InP(001) quantum dots and quantum sticks grown by metalorganic vapor phase epitaxy
000657 (2007)		Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures
000658 (2007)		Modulated reflectivity probing of quantum dot and wetting layer states in InAs/GaInAsP/InP quantum dot laser structures
000667 (2007)		Local electronic transport through InAs/InP(0 01) quantum dots capped with a thin InP layer studied by an AFM conductive probe
000678 (2007)		Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAs

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List of associated KwdEn.i

Nombre de documents	Descripteur
46	III-V semiconductors
45	Experimental study
35	Gallium arsenides
25	Indium arsenides
25	Photoluminescence
19	Indium phosphides
18	Transmission electron microscopy
17	MOVPE method
16	Binary compounds
16	Quantum dots
16	TEM
15	Indium compounds
14	Molecular beam epitaxy
12	Crystal growth from vapors
12	Nanostructured materials
12	Semiconductor materials
12	Ternary compounds
12	VPE
11	Growth mechanism
10	III-V compound
10	Indentation
9	Quantum wells
8	Indium phosphide
7	Nanomaterial synthesis
7	Nanostructures
7	Thin films
7	XRD
6	Atomic force microscopy
6	Dislocations
6	Gallium phosphides
6	Low pressure
6	Plasticity
6	Semiconductor lasers
6	Semiconductor quantum wells
5	Nanowires
5	Semiconductor growth
4	Annealing
4	Cathodoluminescence
4	Characterization
4	Epitaxial layers
4	MOCVD
4	Monocrystals
4	Multiple quantum well
4	Nanoindentation
4	Optical properties
4	Plastic deformation
4	Plastic flow
4	Quantum well lasers
4	Selective area
4	Selective growth
4	Temperature dependence
3	Aluminium arsenides
3	Chemical composition
3	Doping
3	Etching
3	GSMBE method
3	Heterostructures
3	Indium Arsenides
3	Interfaces
3	Ion beam effects
3	Laser diodes
3	Microelectronic fabrication
3	Photoreflectance
3	Quantum dot lasers
3	Quaternary compounds
3	Relaxation
3	SEM
3	Scanning transmission electron microscopy
3	Semiconductor epitaxial layers
3	Semiconductor quantum dots
3	Solid-solid interfaces
3	Stacking faults
3	Surfaces
3	Temperature effects
2	Aluminium compounds
2	Ambient temperature
2	Arrays
2	Buried laser
2	Catalysts
2	Chemical beam epitaxy
2	Crystal structure
2	Current density
2	Damage
2	Electron beam lithography
2	Electronic structure
2	Emission spectra
2	Encapsulation
2	Epitaxy
2	Excitons
2	Fluctuations
2	Gallium compounds
2	Gallium nitride
2	Ground states
2	Growth rate
2	Hardness
2	Hydrogenation
2	Indium
2	Indium Phosphides
2	Indium antimonides
2	Indium nitride

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