IndiumV3, France, Analysis, indexItem, Author.i, G. Nouet

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.

Ident.	Authors (with country if any)	Title
000296 (2010)		Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer
000622 (2007)		Synthesis and material properties of Cu-III-VI2 chalcopyrite thin films
000694 (2007)		Effect of annealing on In2S3 thin films prepared by flash evaporation
000703 (2007)		DC and high-frequency conductivity of CuInSe2 bulk crystals
000766 (2006)		Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE
000799 (2006)		Meta-GGA calculation of the electronic structure of group III-V nitrides
000822 (2006)		Growth and characterization of CuInxGa1-xTe2 used for photovoltaic conversion
000832 (2006)		Fabrication and characterisation of CuInSe2/Si(1 0 0) thin films by the stacked elemental layer (SEL) technique
000943 (2005)		Interfacial structure of MBE grown InN on GaN
000992 (2005)		Diffusion of Zn in CuInSe2 bulk crystals
000D79 (2003)		Electrical and photoluminescence properties of evaporated CuIn1-xGaxTe2 thin films
001246 (2001)		First-principles calculations of optical properties of AlN, GaN, and InN compounds under hydrostatic pressure
001559 (1999-06-15)		Formation mechanism and relative stability of the {1120} stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides
001872 (1998-04-06)		Chemical ordering in wurtzite InxGa1-xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy

List of associated KwdEn.i

Nombre de documents	Descripteur
5	Chalcopyrite
4	Experimental study
4	Gallium nitrides
4	Indium nitrides
3	Aluminium nitrides
3	Copper selenides
3	Indium selenides
3	Mismatch lattice
3	Molecular beam epitaxy
3	Optical properties
3	Thin films
3	Transmission electron microscopy
3	XRD
2	APW calculations
2	Absorption coefficients
2	Activation energy
2	Annealing
2	Binary compounds
2	Defect
2	Dispersive spectrometry
2	Electrical conductivity
2	Flash evaporation
2	Gallium compounds
2	III-V semiconductors
2	Indium compounds
2	Interfaces
2	Microstructure
2	Photoluminescence
2	Semiconductor materials
2	Thin film
2	Wide band gap semiconductors
2	Wurtzite structure
1	Acceptor center
1	Aluminium compounds
1	Aluminium nitride
1	Aluminium oxides
1	Atomic clusters
1	Band structure
1	Buffer layer
1	Ceramics
1	Chemical composition
1	Compressive stress
1	Copper
1	Copper Indium Gallium Tellurides
1	Copper tellurides
1	Crystal field splitting
1	Crystal growth
1	Crystal symmetry
1	Density functional method
1	Dielectric function
1	Diffusion coefficient
1	Digital simulation
1	Dislocation annihilation
1	Dislocation density
1	Dislocation interactions
1	Dislocation motion
1	Donor center
1	Doping
1	Electrical properties
1	Electron beams
1	Electron diffraction
1	Electron microscopy
1	Electronic density of states
1	Electronic structure
1	Energy gap
1	Epitaxial layers
1	Exchange interactions
1	Flashing
1	Gallium nitride
1	Gallium tellurides
1	Generalized gradient approximation
1	Ground states
1	Heterogeneous catalysis
1	Hydrostatic pressure
1	Impurity scattering
1	Indium
1	Indium Sulfides
1	Indium nitride
1	Indium tellurides
1	Ingot
1	Inorganic compounds
1	Interfacial area
1	Lattice parameters
1	Local density approximation
1	Measuring methods
1	Misfit dislocations
1	Multiple quantum well
1	Nitrogen compounds
1	Optical constants
1	Optical material
1	Phase analysis
1	Photovoltaic conversion
1	Polycrystal
1	Preferred orientation
1	Pressure effects
1	Refractive index
1	Resonance
1	Scanning electron microscopy
1	Selenium
1	Semiconductor epitaxial layers

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   |clé=    G. Nouet
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Serveur d'exploration sur l'Indium - Analysis (France)Index « Auteurs » - entrée « G. Nouet »

List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « G. Nouet »