G. Le Mestreallan < G. Le Roux < G. Lecamp

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]

Ident.	Authors (with country if any)	Title
001207 (2001)		MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55μm VCSELs
001291 (2001)		(InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength range
001309 (2000-10-16)		Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
001374 (2000)		TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures
001590 (1999-02-15)		Oxide confining layer on an InP substrate
001704 (1999)		MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP
001975 (1998)		Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
001996 (1998)		High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy
001B13 (1997-07)		Base metallization stability in InP/InGaAs heterojunction bipolar transistors and its influence on leakage currents
001B30 (1997-05-26)		Low threshold InGaAlAs monolithic vertical cavity bistable device at 1.5 μm wavelength
001C35 (1997)		Monolithic vertical cavity device lasing at 1.55μm in InGaAlAs system
001C93 (1997)		Controlled steam oxidation of AlInAs for microelectronics and optoelectronics applications
001D85 (1996-06-24)		p- and n-type carbon doping of InxGa1-xAsyP1-y alloys lattice matched to InP
001E24 (1996-03-01)		Kinematic versus dynamic approaches of x-ray diffraction simulation. Application to the characterization of InGaAs/InGaAlAs multiple quantum wells
001F69 (1996)		CBE growth of InGaAs(P) alloys using TDMAAs and TBP
002370 (1994)		Optical characterization of chemical beam epitaxy grown Ga0.52In0.48P layers and related microstructures
002662 (1993)		Growth of InGaAs/GaAs quantum wells with perfectly abrupt interfaces by molecular beam epitaxy
002A16 (1991)		Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys
002B85 (1990)		Chemical beam epitaxy of indium phosphide
003018 (1986)		InGaAsP superlattices grown by liquid-phase epitaxy
003022 (1986)		Growth and characterization of InxGa1-xAs/InyGa1-yAs strained-layer superlattice on InP substrate

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List of associated KwdEn.i

Nombre de documents	Descripteur
15	Experimental study
7	Gallium arsenides
6	III-V semiconductors
6	Photoluminescence
6	Semiconductor materials
5	Inorganic compound
5	Semiconductor lasers
4	Chemical composition
4	Crystal growth
4	Epitaxy
4	Indium arsenides
4	Indium compounds
4	Indium phosphides
3	Characterization
3	Crystal growth from vapors
3	Epitaxial layers
3	Experiments
3	Indium Phosphides
3	Mirrors
3	Refractive index
3	Thin film
3	Thin films
2	Aluminium compounds
2	Binary compounds
2	Computer simulation
2	Gallium Indium Arsenides Mixed
2	Gallium Indium Arsenides phosphides Mixed
2	Gallium phosphides
2	III-V compound
2	Low pressure
2	Low pressure metallorganic vapor phase epitaxy
2	Low temperature
2	MOVPE method
2	Metallorganic vapor phase epitaxy
2	Oxidation
2	Quaternary compounds
2	Semiconducting indium compounds
2	Semiconducting indium phosphide
2	Semiconductor growth
2	Solid solution
2	Substrates
2	Superlattice
2	Superlattices
2	Surface emitting lasers
2	TEM
2	Ternary compounds
2	VPE
2	Vertical cavity surface emitting laser
2	XRD
1	Acoustic properties
1	Aluminium Arsenides
1	Aluminium arsenides
1	Ambient temperature
1	Annealing
1	Application
1	Binary alloys
1	Brillouin effect
1	CBE
1	Chemical beam condensation
1	Chemical interdiffusion
1	Contact resistance
1	Crystal defect level
1	Crystal lattices
1	Current density
1	Deep level transient spectrometry
1	Deformation
1	Diffusion
1	Distributed Bragg reflector
1	Distributed Bragg reflectors
1	Doping
1	Double heterojunction
1	Electro-optical effects
1	Electrons
1	Ellipsometry
1	Gallium Arsenides
1	Gallium Arsenides phosphides
1	Gallium nitrides
1	Growth from liquid
1	Growth mechanism
1	Heteroepitaxy
1	Heterojunction bipolar transistors
1	Homoepitaxy
1	Hydrides
1	Indium Arsenides
1	Indium Arsenides phosphides
1	Indium nitrides
1	Infrared laser
1	Instability
1	Iron additions
1	Irradiation
1	Kinetics
1	Laser cavities
1	Laser diodes
1	Laser mode locking
1	Laser resonators
1	Lattice mismatched
1	Leakage currents
1	MESA technology
1	Measuring methods
1	Metallorganic chemical vapor deposition

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