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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « G. Le Lay »
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G. Lazard < G. Le Lay < G. Le Marois  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
000640 (2007) Pb induced charge accumulation on InAs(111)B
000C45 (2003-04-14) Self-assembled molecular chains formed by selective adsorption of lead-phthalocyanine on InSb(100)-(4×2)/c(8×2)
001153 (2001) Structure, electronics and dynamics of clean and metal adsorbed semiconductor surfaces: recent results and perspectives
001212 (2001) Lead phthalocyanine thin films on InAs(100)-(4 x 2)/c(8 x 2) studied by synchrotron radiation photoelectron spectroscopy
001407 (2000) Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces
001535 (1999-09-15) Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface
001561 (1999-06-15) Atomic structure of the As-rich InAs(100) β2(2×4) surface
001912 (1998) Two-dimensional electron gas at InAs(100)1 x 2/1 x 4 Pb
001E81 (1996) Sb or Cs covered InAs(110) surfaces : Moving eF into conduction band and quantized 2D electron channel
002143 (1995) Na/InAs(110) interface formation at RT
002273 (1994-07) Cs-induced highest EF jump above InAs(110) conduction-band minimum
002404 (1994) Giant band bending and interface formation of Cs/InAs(110) zt room temperature
002444 (1994) Alkali-metal-induced highest Fermi-level pinning position above semiconductor conduction band minimum
002666 (1993) Giant band bending induced by Ag on InAs(110) surfaces at low temperature
002686 (1993) Electronic properties of cleaved (110) and MBE-grown (100) InAs surfaces, clean and covered with an ultra-thin Ag adlayer

List of associated KwdEn.i

Nombre de
documents		Descripteur
14Experimental study
10Indium arsenides
8Photoelectron spectroscopy
8Synchrotron radiation
7Adsorption
7Semiconductor materials
6Fermi level
5Cesium
5Surface states
4Electronic structure
4III-V semiconductors
4Solid-solid interfaces
3Band bending
3Indium compounds
3Monolayers
3Schottky barrier
3Surface structure
2Accumulation layers
2Coverage rate
2Electron gas
2Heterojunctions
2Inorganic compounds
2Photoemission
2Pinning
2Silver
2Surface electron state
1Absorption
1Adsorbed state
1Adsorption site
1Adsorption structure
1Ambient temperature
1Antimony
1Band structure
1Cleavage
1Coatings
1Conduction bands
1Core levels
1Crystal faces
1Dimerization
1Donors
1Effective mass
1Gallium arsenides
1Indium Arsenides
1Indium antimonides
1Inorganic compound
1Interface electron state
1Interface states
1LEED
1Lattice dynamics
1Lead
1Lead Complexes
1Liquid solid interface
1Metallophthalocyanine
1N type conductivity
1Nitrogen heterocycle
1Organic compounds
1Organic ligand
1Organic semiconductors
1P type conductivity
1Photoelectron emission
1Photoelectron spectra
1STM
1Self-assembly
1Semiconductor epitaxial layers
1Semiconductor thin films
1Sodium
1Spectral shift
1Strains
1Superstructure
1Surface reactions
1Temperature
1Thickness
1Two-dimensional systems
1X-ray photoelectron spectra
1XRD

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