Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « G. Hollinger »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
G. Hirt < G. Hollinger < G. Horowitz  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 64.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000236 (2011) Direct epitaxial growth of InP based heterostructures on SrTiO3/Si(0 0 1) crystalline templates
000237 (2011) Crystallographic orientation transition of InP islands on SrTiO3 substrates with the growth temperature
000434 (2009) Influence of the surface reconstruction on the growth of InP on SrTiO3(0 01)
000968 (2005) Feasibility of III-V on-silicon strain relaxed substrates
000973 (2005) Experimental and theoretical investigation into the difficulties of thallium incorporation into III-V semiconductors
000A32 (2004-05-01) From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
000A85 (2004) STM and FIB nano-structuration of surfaces to localise InAs/InP(0 0 1) quantum dots
000B49 (2004) Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substrates
000B93 (2004) A comparative study of gatlas, intlas and gaintlas grown by SSMBE : The detrimental effect of indium
000C22 (2003-08-15) Optical absorption spectroscopy measurement of the gap shrinkage due to thallium incorporation in GaInTlAs alloys
000D72 (2003) Experimental evidence for critical 2D nuclei in the 2D/3D growth mode transition of compressive and tensile strained InGaAs on InP(001)
000E22 (2002-11-15) Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001)
000E48 (2002-07-01) Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)
000E88 (2002) Microlasers à cristaux photoniques en InP reporté sur silicium
000F55 (2002) Optical anisotropy and photoluminescence temperature dependence for self-assembled InAs quantum islands grown on vicinal (001) InP substrates
001058 (2001-12-24) Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates
001103 (2001-05) Growth of GaInTlAs layers on InP by molecular beam epitaxy
001228 (2001) InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6μm
001229 (2001) InP 2D photonic crystal microlasers on silicon wafer: Room temperature operation at 1.55 μm
001242 (2001) Growth of GaInTlAs alloys on InP by low temperature molecular beam epitaxy
001385 (2000) Strained InAs nanostructures self-organised on high-index InP(113)B

List of associated KwdEn.i

Nombre de
documents
Descripteur
49Experimental study
30Molecular beam epitaxy
23Indium arsenides
21III-V semiconductors
20Gallium arsenides
19Photoluminescence
14Semiconductor materials
13Indium Phosphides
11Indium compounds
11Indium phosphides
10Inorganic compound
9Atomic force microscopy
9Ternary compounds
9X ray
8Aluminium arsenides
8Passivation
8Photoelectron spectrometry
7Crystal growth
7Surface reconstruction
7Surface structure
6Heterostructures
6Island structure
6Oxidation
6RHEED
6Semiconductor growth
6Thin films
5Characterization
5Crystal growth from vapors
5Growth mechanism
5Photoelectron emission
5Photoelectron spectroscopy
5Reflection high energy electron diffraction
5Semiconductor quantum wells
5Sulfurization
5Surface treatment
5Thickness
5Thin film
4Chemical composition
4Heterojunctions
4III-V compound
4Indium Phosphates
4Self-assembly
4Semiconductor epitaxial layers
4Stress relaxation
4Theoretical study
3Binary compounds
3Binding energy
3Controlled atmosphere
3Density of states
3Electronic structure
3Epitaxy
3Indium Arsenides
3Indium Oxides
3Indium phosphide
3Interface states
3Interfaces
3Microelectronic fabrication
3Morphology
3Optical properties
3Oxides
3Pseudomorphic growth
3Quantum dots
3Quantum wells
3Relaxation
3STM
3Semiconductor quantum dots
3Stoichiometry
3Strained layer
3Strains
3Strontium titanates
3Transmission electron microscopy
3XRD
2Aluminium compounds
2Chemical bond
2Compressive stress
2Dielectric function
2Electrical properties
2Epitaxial film
2Epitaxial layers
2Fabrication property relation
2Field effect transistor
2Film growth
2Glow discharge
2Indium Phosphides sulfides
2Indium Sulfides
2Inorganic compounds
2Interface
2Interface structure
2Kinetics
2MIS structure
2Molecular beam
2Nanostructures
2Nanotechnology
2Nucleation
2Optical microscopy
2Optical pumping
2Oxide layer
2Oxygen
2Ozone
2Plasma

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "G. Hollinger" 
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "G. Hollinger" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    G. Hollinger
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024