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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « G. Halkias »
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G. Hadziioannouc < G. Halkias < G. Hallais  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
002536 (1993) Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells
002565 (1993) Room-temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates
002566 (1993) Room temperature photoreflectance as a powerful tool to characterize the crystalline quality of InAlAs layers grown on InP substrates
002581 (1993) Photoreflectance studies of lattice-matched and strained InGaAs/InAlAs single quantum wells
002586 (1993) Photo-induced current transient spectroscopy of Al0.48In0.52As semi-insulating layers grown on InP by molecular beam epitaxy
002622 (1993) Materials problems for the development of InGaAs/InAlAs HEMT technology
002726 (1993) Characterization of lattice-matched and strained GaInAs/AlInAs HEMT structures by photoluminescence spectroscopy
002747 (1993) A comprehensive optimization of InAlAs molecular beam epitaxy for InGaAs/InAlAs HEMT technology

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Experimental study
4Aluminium arsenides
4Gallium Indium Arsenides Mixed
4Indium arsenides
4Semiconductor materials
4Ternary compounds
3Aluminium Indium Arsenides Mixed
3High electron mobility transistor
3Molecular beam epitaxy
3Optical properties
3Photoluminescence
2Characterization
2Crystal growth
2Thin films
1Aluminium Indium Arsenides
1Amplitude phase
1Band offset
1Binary compounds
1Charge carrier mobility
1Chemical composition
1Conduction band
1Conduction bands
1Crystal defect
1Crystal perfection
1Dislocation
1Dislocation density
1Electrical properties
1Electron mobility
1Electronic component
1Energy-level transitions
1Epitaxy
1Extended defect
1Gallium arsenides
1High temperature
1III-V compound
1Impurity
1Indium phosphides
1Infrared spectra
1Inorganic compound
1Interband transition
1Interfaces
1Least squares method
1Line widths
1Low temperature
1Microstructure
1Mismatch lattice
1Molecular beam condensation
1Multijunction structure
1Multiple layer
1Optical modulation
1Optical reflection
1Optical transition
1Performance
1Phase transformation
1Photo-induced transient spectroscopy
1Quantum well
1Quantum wells
1Reflection spectrum
1Semiconductor device
1Silicon
1Spectral reflectance
1Stacking fault density
1Support
1Surfaces
1Temperature
1Temperature dependence
1Temperature measurement
1Temperature range 400-1000 K
1Thin film
1Transmission electron microscopy

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