G. Guiffant < G. Guillot < G. Guzman

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 59.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000788 (2006)		Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(0 0 1)
000914 (2005)		Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer
000A32 (2004-05-01)		From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
000C22 (2003-08-15)		Optical absorption spectroscopy measurement of the gap shrinkage due to thallium incorporation in GaInTlAs alloys
000E22 (2002-11-15)		Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001)
000F55 (2002)		Optical anisotropy and photoluminescence temperature dependence for self-assembled InAs quantum islands grown on vicinal (001) InP substrates
001058 (2001-12-24)		Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates
001337 (2000-04-17)		Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well
001546 (1999-08-01)		Theoretical and experimental studies in n-type modulation-doped InxGa1-xAs/InyAl1-yAs/InP magnetic sensors
001675 (1999)		Random telegraph signal noise instabilities in latticemismatched InGaAs/InP photodiodes
001724 (1999)		Highly tunable and selective fabry Perot filter based on InP-air Bragg mirrors for W.D.M. applications
001921 (1998)		Temperature dependence of AlInAs band gap energy and AlInAs/InP band offsets
001969 (1998)		New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFET's
001994 (1998)		Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications
001995 (1998)		Highly selective 1.55 μm InP/air gap micromachined Fabry-Perot filter for optical communications
001A13 (1998)		Electro-absorption modulator using a type-II quantum well in the InxGa1-xAs/InAlAs/InP system
001B15 (1997-06-16)		Type II recombination and band offset determination in a tensile strained InGaAs quantum well
001C31 (1997)		Optical characterization methods of InP based micro-opto-electro-mechanical systems
001C57 (1997)		InP-based micro-mechanical tunable and selective photodetector for WDM systems
001C90 (1997)		Deep trap characterisation and conduction band offset determination of Al0.48In0.52As/(Ga0.7Al0.3)0.48In0.52As heterostructures
001D39 (1996-11)		Caractérisations électro-optiques de couches AlInAs épitaxiées sur InP

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List of associated KwdEn.i

Nombre de documents	Descripteur
40	Experimental study
27	Photoluminescence
20	Indium arsenides
20	Semiconductor materials
18	Ternary compounds
15	Aluminium arsenides
15	Gallium arsenides
15	Indium Phosphides
14	Indium phosphides
13	Inorganic compound
10	Molecular beam epitaxy
9	Gallium Indium Arsenides Mixed
9	Optical properties
8	Binary compounds
8	III-V semiconductors
8	Quantum wells
7	III-V compound
7	Impurity
7	Indium compounds
6	Deep level transient spectrometry
5	Band offset
5	Charge carrier trapping
5	Heterostructures
5	Impurity level
5	Optical transition
5	Temperature
5	Temperature dependence
5	Thin films
4	Acceptor center
4	Activation energy
4	Binary compound
4	Characterization
4	Conduction bands
4	Deep level
4	Defect states
4	Gallium Arsenides
4	Indium Arsenides
4	Low temperature
4	Micromachining
4	Wavelength division multiplexing
3	Aluminium Indium Arsenides Mixed
3	Band structure
3	Crystal growth
3	Ground states
3	Hall effect
3	High electron mobility transistor
3	Island structure
3	Optical communication
3	Photodiode
3	Quantum dots
3	Self-assembly
3	Ternary compound
3	Theoretical study
3	Theory
3	Time resolved spectra
3	Traps
2	Chemical composition
2	Chemical vapor deposition
2	DLTS
2	Deep energy levels
2	Deep level optical spectrometry
2	Defect level
2	Donor center
2	Doping
2	Electric conductivity
2	Electrical conductivity
2	Energy gap
2	Epitaxial film
2	Epitaxial layers
2	Excitation spectrum
2	Excited states
2	Experiments
2	Fabry Perot filters
2	Fluctuations
2	Heat treatments
2	Heterojunction
2	Impurity ionization
2	Infrared spectra
2	Interface
2	Interface states
2	Ionization
2	Iron
2	Line intensity
2	Line widths
2	Localized states
2	Magnesium
2	Magnetic fields
2	Molecular beam condensation
2	N type conductivity
2	Noise
2	Optical filters
2	Optical resonators
2	Passivation
2	Photodetector
2	Photodetectors
2	Photoionization
2	Rapid thermal annealing
2	Self consistency
2	Semiconducting indium phosphide
2	Semiconductor epitaxial layers

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