Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « G. Grenet »
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G. Gregoris < G. Grenet < G. Grillon  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000366 (2010) 3D harnessing of light with photon cage
000968 (2005) Feasibility of III-V on-silicon strain relaxed substrates
000973 (2005) Experimental and theoretical investigation into the difficulties of thallium incorporation into III-V semiconductors
000A24 (2004-06-01) Study of thiol-induced adhesion of stressed III-V semiconductor on wax using thin film elastic relaxation
000B93 (2004) A comparative study of gatlas, intlas and gaintlas grown by SSMBE : The detrimental effect of indium
000E48 (2002-07-01) Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)
001103 (2001-05) Growth of GaInTlAs layers on InP by molecular beam epitaxy
001242 (2001) Growth of GaInTlAs alloys on InP by low temperature molecular beam epitaxy
001385 (2000) Strained InAs nanostructures self-organised on high-index InP(113)B
001388 (2000) Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001)
001774 (1999) Alloying effects in self-assembled InAs/InP dots
001803 (1998-11-16) Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)
001924 (1998) Surface spinodal decomposition in low temperature Al048In052As grown on InP(001) by molecular beam epitaxy
001A72 (1997-10-15) Role of surface energy and surface reconstructions on the 2D-to-3D growth-mode transition of strained InxGa1-xAs layers on InP(001)
001F27 (1996) In situ XPS investigation of indium surface segregation for Ga1-xInxAs and Al1-xInxAs alloys grown by MBE on InP(001)
002288 (1994-05-15) X-ray-photoelectron-diffraction study of InAs/InP(001) heterostructures

List of associated KwdEn.i

Nombre de
documents
Descripteur
12Molecular beam epitaxy
11Experimental study
8III-V semiconductors
8Indium arsenides
6Atomic force microscopy
6Gallium arsenides
5Indium compounds
5Surface reconstruction
4Aluminium arsenides
4Indium phosphides
4Photoluminescence
4RHEED
4Ternary compounds
3Semiconductor growth
3Surface structure
3Thin films
2Binary compounds
2Crystal growth from vapors
2Fabrication property relation
2Interface structure
2Island structure
2Morphology
2Optical microscopy
2Photoelectron spectroscopy
2STM
2Self organization
2Self-assembly
2Semiconductor epitaxial layers
2Semiconductor materials
2Strained layer
2Strains
2Thallium additions
2Waxes
2XRD
1Adhesion
1Aluminium compounds
1Anelastic relaxation
1Arsenic Phosphides
1Borosilicate glass
1Buffer layer
1Characterization
1Chemical interdiffusion
1Chemical reactions
1Comparative study
1Doping
1Elasticity
1Evaporation
1Film growth
1Growth mechanism
1Heterojunctions
1Heterostructures
1III-V compound
1Impurities
1Impurity density
1Impurity segregation
1In situ
1Indium Phosphides
1Interface states
1Interfaces
1Internal stresses
1Ion beam mixing
1Low temperature
1Microelectronic fabrication
1Monocrystals
1Monolayers
1Nanophotonics
1Nanostructured materials
1Nanostructures
1Nanowires
1Optical microcavity
1Optical polarization
1Phase separation
1Quantity ratio
1Quantum dots
1Quantum wires
1RBS
1Rapid thermal annealing
1Reflection high energy electron diffraction
1Relaxation
1Rutherford backscattering
1Segregation
1Semiconductor quantum dots
1Semiconductor quantum wells
1Semiconductor thin films
1Solid source molecular beam epitaxy
1Solid-solid interfaces
1Spinodal decomposition
1Sticking coefficient
1Stress relaxation
1Substrates
1Surface energy
1Surface morphology
1Surface phase transformations
1Surface segregation
1Surface treatments
1TEM
1Temperature effects
1Thallium compounds
1Theoretical study
1Thickness

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