Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « G. Bremond »
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G. Bourgeois < G. Bremond < G. Brojerdi  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 27.
[0-20] [0 - 20][0 - 27][20-26][20-40]
Ident.Authors (with country if any)Title
000330 (2010) Electrical properties of self-assembled InAs/InAlAs quantum dots on InP
000702 (2007) Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers
000788 (2006) Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(0 0 1)
000819 (2006) Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(001)
000975 (2005) Evidence of lateral coupling in long wavelength vertically stacked InAs/GaAs(001) quantum dots
000A32 (2004-05-01) From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
000C22 (2003-08-15) Optical absorption spectroscopy measurement of the gap shrinkage due to thallium incorporation in GaInTlAs alloys
000C38 (2003-05-15) Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots
000D00 (2003) Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices
000E22 (2002-11-15) Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001)
000E48 (2002-07-01) Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)
000F55 (2002) Optical anisotropy and photoluminescence temperature dependence for self-assembled InAs quantum islands grown on vicinal (001) InP substrates
001058 (2001-12-24) Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates
001103 (2001-05) Growth of GaInTlAs layers on InP by molecular beam epitaxy
001242 (2001) Growth of GaInTlAs alloys on InP by low temperature molecular beam epitaxy
001667 (1999) Self-organized growth, ripening, and optical properties of uncapped InP/GaP (100) islands
002061 (1995-04) Caractérisation électrique et optique de couches de GaAs hétéroépitaxiées sur InP et analyse des dispositifs MESFETs fabriqués sur ces couches
002259 (1994-09) Photorefractive effect in InP:Fe dominated by holes at room temperature: influence of the indirect transitions
002695 (1993) Electrical characterization of lattice-mismatched InP/InxGa1-xAs/InP heterostructures and PIN photodiodes grown by LP-MOCVD
002744 (1993) A new encapsulation method of InP during post implantation annealing
002907 (1992) Electrical behavior of Yb ion in p- and n-type InP

List of associated KwdEn.i

Nombre de
documents
Descripteur
21Experimental study
16Photoluminescence
12III-V semiconductors
10Molecular beam epitaxy
9Indium Phosphides
9Indium arsenides
8Inorganic compound
7Indium compounds
7Semiconductor materials
6Gallium arsenides
6Quantum dots
5Activation energy
5Impurity level
5Indium phosphides
5Self-assembly
4Binary compounds
4Charge carrier trapping
4Deep level transient spectrometry
4Island structure
4Low temperature
4Semiconductor quantum dots
3Aluminium arsenides
3Atomic force microscopy
3DLTS
3Excited states
3Impurity
3Self-assembled layers
3Semiconductor growth
3Temperature
2Acceptor center
2Aluminium compounds
2Deep level
2Deep level optical spectrometry
2Defect level
2Donor center
2Electrical conductivity
2Fluctuations
2Gallium Indium Arsenides Mixed
2Ground states
2Infrared spectra
2Iron additions
2Mismatch lattice
2N type conductivity
2Optical properties
2Optical transition
2Photoionization
2Self organization
2Semiconductor epitaxial layers
2Single crystal
2Ternary compounds
2Thallium compounds
2Thin films
2Transmission electron microscopy
1Aluminium Indium Arsenides Mixed
1Anisotropy
1Annealing
1Binary compound
1CV characteristic
1Characterization
1Charge carrier concentration
1Charge carrier generation
1Chemical vapor deposition
1Chromium
1Codoping
1Complex defect
1Continuous wave
1Coupling
1Cross section
1Crystal field splitting
1Crystal growth
1Czochralski method
1Dark current
1Deep level transient spectroscopy
1Defect density
1Defect states
1Depth profiles
1Digital simulation
1Dislocations
1Doping
1Electric admittance
1Electrical characteristic
1Electron paramagnetic resonance
1Electron relaxation time
1Electronic transition
1Elliptic shape
1Encapsulation
1Energy gap
1Epitaxial layers
1Exchange interactions
1Excitation spectrum
1Excited state
1Fabrication property relation
1Gain
1Gallium Arsenides
1Gallium Phosphides
1Growth from liquid
1Growth mechanism
1Hall effect
1Heteroepitaxy
1Heterojunction

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