G. Bourgeois < G. Bremond < G. Brojerdi

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 27.
[0-20] [0 - 20][0 - 27][20-26][20-40]

Ident.	Authors (with country if any)	Title
000330 (2010)		Electrical properties of self-assembled InAs/InAlAs quantum dots on InP
000702 (2007)		Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers
000788 (2006)		Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(0 0 1)
000819 (2006)		Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(001)
000975 (2005)		Evidence of lateral coupling in long wavelength vertically stacked InAs/GaAs(001) quantum dots
000A32 (2004-05-01)		From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
000C22 (2003-08-15)		Optical absorption spectroscopy measurement of the gap shrinkage due to thallium incorporation in GaInTlAs alloys
000C38 (2003-05-15)		Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots
000D00 (2003)		Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices
000E22 (2002-11-15)		Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001)
000E48 (2002-07-01)		Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)
000F55 (2002)		Optical anisotropy and photoluminescence temperature dependence for self-assembled InAs quantum islands grown on vicinal (001) InP substrates
001058 (2001-12-24)		Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates
001103 (2001-05)		Growth of GaInTlAs layers on InP by molecular beam epitaxy
001242 (2001)		Growth of GaInTlAs alloys on InP by low temperature molecular beam epitaxy
001667 (1999)		Self-organized growth, ripening, and optical properties of uncapped InP/GaP (100) islands
002061 (1995-04)		Caractérisation électrique et optique de couches de GaAs hétéroépitaxiées sur InP et analyse des dispositifs MESFETs fabriqués sur ces couches
002259 (1994-09)		Photorefractive effect in InP:Fe dominated by holes at room temperature: influence of the indirect transitions
002695 (1993)		Electrical characterization of lattice-mismatched InP/InxGa1-xAs/InP heterostructures and PIN photodiodes grown by LP-MOCVD
002744 (1993)		A new encapsulation method of InP during post implantation annealing
002907 (1992)		Electrical behavior of Yb ion in p- and n-type InP

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List of associated KwdEn.i

Nombre de documents	Descripteur
21	Experimental study
16	Photoluminescence
12	III-V semiconductors
10	Molecular beam epitaxy
9	Indium Phosphides
9	Indium arsenides
8	Inorganic compound
7	Indium compounds
7	Semiconductor materials
6	Gallium arsenides
6	Quantum dots
5	Activation energy
5	Impurity level
5	Indium phosphides
5	Self-assembly
4	Binary compounds
4	Charge carrier trapping
4	Deep level transient spectrometry
4	Island structure
4	Low temperature
4	Semiconductor quantum dots
3	Aluminium arsenides
3	Atomic force microscopy
3	DLTS
3	Excited states
3	Impurity
3	Self-assembled layers
3	Semiconductor growth
3	Temperature
2	Acceptor center
2	Aluminium compounds
2	Deep level
2	Deep level optical spectrometry
2	Defect level
2	Donor center
2	Electrical conductivity
2	Fluctuations
2	Gallium Indium Arsenides Mixed
2	Ground states
2	Infrared spectra
2	Iron additions
2	Mismatch lattice
2	N type conductivity
2	Optical properties
2	Optical transition
2	Photoionization
2	Self organization
2	Semiconductor epitaxial layers
2	Single crystal
2	Ternary compounds
2	Thallium compounds
2	Thin films
2	Transmission electron microscopy
1	Aluminium Indium Arsenides Mixed
1	Anisotropy
1	Annealing
1	Binary compound
1	CV characteristic
1	Characterization
1	Charge carrier concentration
1	Charge carrier generation
1	Chemical vapor deposition
1	Chromium
1	Codoping
1	Complex defect
1	Continuous wave
1	Coupling
1	Cross section
1	Crystal field splitting
1	Crystal growth
1	Czochralski method
1	Dark current
1	Deep level transient spectroscopy
1	Defect density
1	Defect states
1	Depth profiles
1	Digital simulation
1	Dislocations
1	Doping
1	Electric admittance
1	Electrical characteristic
1	Electron paramagnetic resonance
1	Electron relaxation time
1	Electronic transition
1	Elliptic shape
1	Encapsulation
1	Energy gap
1	Epitaxial layers
1	Exchange interactions
1	Excitation spectrum
1	Excited state
1	Fabrication property relation
1	Gain
1	Gallium Arsenides
1	Gallium Phosphides
1	Growth from liquid
1	Growth mechanism
1	Hall effect
1	Heteroepitaxy
1	Heterojunction

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